Oxygen etching of thick MoS2 films

Robert Ionescu, Aaron George, Isaac Ruiz, Zachary Favors, Zafer Mutlu, Chueh Liu, Kazi Ahmed, Ryan Wu, Jong S. Jeong, Lauro Zavala, K. Andre Mkhoyan, Mihri Ozkan, Cengiz S. Ozkan

Research output: Contribution to journalArticlepeer-review

52 Scopus citations


Oxygen annealing of thick MoS2 films results in randomly oriented and controllable triangular etched shapes, forming pits with uniform etching angles. These etching morphologies differ across the sample based on the defect sites situated on the basal plane surface, forming numerous features in different bulk sample thicknesses.

Original languageEnglish (US)
Pages (from-to)11226-11229
Number of pages4
JournalChemical Communications
Issue number76
StatePublished - Jan 1 2014


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