Oxygen etching of thick mos2 films

Robert Ionescu; Aaron George; Isaac Ruiz; Zachary Favors; Zafer Mutlu; Chueh Liu; Kazi Ahmed; Ryan Wu; Jong S. Jeong; Lauro Zavala; K. Andre Mkhoyan; Mihri Ozkan; Cengiz S. Ozkan

doi:10.1039/c4cc03911d

Oxygen etching of thick mos₂ films

Robert Ionescu, Aaron George, Isaac Ruiz, Zachary Favors, Zafer Mutlu, Chueh Liu, Kazi Ahmed, Ryan Wu, Jong S. Jeong, Lauro Zavala, K. Andre Mkhoyan, Mihri Ozkan, Cengiz S. Ozkan

Chemical Engineering and Materials Science

Research output: Contribution to journal › Article › peer-review

55 Scopus citations

Abstract

Oxygen annealing of thick MoS₂ films results in randomly oriented and controllable triangular etched shapes, forming pits with uniform etching angles. These etching morphologies differ across the sample based on the defect sites situated on the basal plane surface, forming numerous features in different bulk sample thicknesses.

Original language	English (US)
Pages (from-to)	11226-11229
Number of pages	4
Journal	Chemical Communications
Volume	50
Issue number	76
DOIs	https://doi.org/10.1039/c4cc03911d
State	Published - Aug 26 2014

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10.1039/c4cc03911d

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title = "Oxygen etching of thick mos2 films",

abstract = "Oxygen annealing of thick MoS2 films results in randomly oriented and controllable triangular etched shapes, forming pits with uniform etching angles. These etching morphologies differ across the sample based on the defect sites situated on the basal plane surface, forming numerous features in different bulk sample thicknesses.",

author = "Robert Ionescu and Aaron George and Isaac Ruiz and Zachary Favors and Zafer Mutlu and Chueh Liu and Kazi Ahmed and Ryan Wu and Jeong, {Jong S.} and Lauro Zavala and Mkhoyan, {K. Andre} and Mihri Ozkan and Ozkan, {Cengiz S.}",

year = "2014",

month = aug,

day = "26",

doi = "10.1039/c4cc03911d",

language = "English (US)",

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pages = "11226--11229",

journal = "Chemical Communications",

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publisher = "Royal Society of Chemistry",

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TY - JOUR

T1 - Oxygen etching of thick mos2 films

AU - Ionescu, Robert

AU - George, Aaron

AU - Ruiz, Isaac

AU - Favors, Zachary

AU - Mutlu, Zafer

AU - Liu, Chueh

AU - Ahmed, Kazi

AU - Wu, Ryan

AU - Jeong, Jong S.

AU - Zavala, Lauro

AU - Mkhoyan, K. Andre

AU - Ozkan, Mihri

AU - Ozkan, Cengiz S.

PY - 2014/8/26

Y1 - 2014/8/26

N2 - Oxygen annealing of thick MoS2 films results in randomly oriented and controllable triangular etched shapes, forming pits with uniform etching angles. These etching morphologies differ across the sample based on the defect sites situated on the basal plane surface, forming numerous features in different bulk sample thicknesses.

AB - Oxygen annealing of thick MoS2 films results in randomly oriented and controllable triangular etched shapes, forming pits with uniform etching angles. These etching morphologies differ across the sample based on the defect sites situated on the basal plane surface, forming numerous features in different bulk sample thicknesses.

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U2 - 10.1039/c4cc03911d

DO - 10.1039/c4cc03911d

M3 - Article

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VL - 50

SP - 11226

EP - 11229

JO - Chemical Communications

JF - Chemical Communications

IS - 76

ER -

Oxygen etching of thick mos₂ films

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