TY - JOUR
T1 - Overcoming the black body limit in plasmonic and graphene near-field thermophotovoltaic systems
AU - Ilic, Ognjen
AU - Joannopoulos, John D.
AU - Soljačić, Marin
AU - Celanovic, Ivan
PY - 2012/5/7
Y1 - 2012/5/7
N2 - Near-field thermophotovoltaic (TPV) systems with carefully tailored emitter-PV properties show large promise for a new temperature range (600 – 1200K) solid state energy conversion, where conventional thermoelectric (TE) devices cannot operate due to high temperatures and far-field TPV schemes suffer from low efficiency and power density. We present a detailed theoretical study of several different implementations of thermal emitters using plasmonic materials and graphene. We find that optimal improvements over the black body limit are achieved for low bandgap semiconductors and properly matched plasmonic frequencies. For a pure plasmonic emitter, theoretically predicted generated power density of 14 Wcm2 and efficiency of 36% can be achieved at 600K (hot-side), for 0.17eV bandgap (InSb). Developing insightful approximations, we argue that large plasmonic losses can, contrary to intuition, be helpful in enhancing the overall near-field transfer. We discuss and quantify the properties of an optimal near-field photovoltaic (PV) diode. In addition, we study plasmons in graphene and show that doping can be used to tune the plasmonic dispersion relation to match the PV cell bangap. In case of graphene, theoretically predicted generated power density of 6(120) W cm2 and efficiency of 35(40)% can be achieved at 600(1200)K, for 0.17eV bandgap. With the ability to operate in intermediate temperature range, as well as high efficiency and power density, near-field TPV systems have the potential to complement conventional TE and TPV solid state heat-to-electricity conversion devices.
AB - Near-field thermophotovoltaic (TPV) systems with carefully tailored emitter-PV properties show large promise for a new temperature range (600 – 1200K) solid state energy conversion, where conventional thermoelectric (TE) devices cannot operate due to high temperatures and far-field TPV schemes suffer from low efficiency and power density. We present a detailed theoretical study of several different implementations of thermal emitters using plasmonic materials and graphene. We find that optimal improvements over the black body limit are achieved for low bandgap semiconductors and properly matched plasmonic frequencies. For a pure plasmonic emitter, theoretically predicted generated power density of 14 Wcm2 and efficiency of 36% can be achieved at 600K (hot-side), for 0.17eV bandgap (InSb). Developing insightful approximations, we argue that large plasmonic losses can, contrary to intuition, be helpful in enhancing the overall near-field transfer. We discuss and quantify the properties of an optimal near-field photovoltaic (PV) diode. In addition, we study plasmons in graphene and show that doping can be used to tune the plasmonic dispersion relation to match the PV cell bangap. In case of graphene, theoretically predicted generated power density of 6(120) W cm2 and efficiency of 35(40)% can be achieved at 600(1200)K, for 0.17eV bandgap. With the ability to operate in intermediate temperature range, as well as high efficiency and power density, near-field TPV systems have the potential to complement conventional TE and TPV solid state heat-to-electricity conversion devices.
UR - http://www.scopus.com/inward/record.url?scp=84860247250&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84860247250&partnerID=8YFLogxK
U2 - 10.1364/OE.20.00A366
DO - 10.1364/OE.20.00A366
M3 - Article
C2 - 22712094
AN - SCOPUS:84860247250
SN - 1094-4087
VL - 20
SP - A366-A384
JO - Optics Express
JF - Optics Express
IS - 103
ER -