Oscillating structure defects in dielectric diodes

W. C. Cheung, Brian G Van Ness

Research output: Contribution to journalArticle

Abstract

The initial stage of electrical breakdown in metal-dielectric-metal structures is considered. In such structures, channels of electronic conductivity and pores are formed near microscopic peaks on the surface of the metallic electrode under the influence of an external constant electric field in the dielectric. Formulas are obtained for calculating the natural oscillation frequency of the resonant pores and conditions for their irreversible growth. The proposed theory may be used for identification and elimination of fabrication defects.

Original languageEnglish (US)
Pages (from-to)1064-1067
Number of pages4
JournalMeasurement Techniques
Volume45
Issue number10
DOIs
StatePublished - Jan 1 2002

Keywords

  • Defect
  • Dielectric diode
  • Electric breakdown
  • Structure

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