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Origin of the turn-on temperature behavior in WTe2
Y. L. Wang
, L. R. Thoutam
, Z. L. Xiao
, J. Hu
, S. Das
, Z. Q. Mao
, J. Wei
, R. Divan
, A. Luican-Mayer
, G. W. Crabtree
, W. K. Kwok
Chemical Engineering and Materials Science
Research output
:
Contribution to journal
›
Article
›
peer-review
169
Scopus citations
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Keyphrases
Metal-insulator Transition
100%
Resistivity
100%
Temperature Behavior
100%
WTe2
100%
Magnetic Field
66%
Electronic Structure
66%
Field-assisted
66%
Structure Change
66%
Low Temperature
33%
Temperature Effect
33%
Field Dependence
33%
Applied Magnetic Field
33%
Zero Field
33%
Magnetic Field Dependence
33%
Quantitative Expression
33%
Extremely Large Magnetoresistance
33%
Material Science
Electrical Resistivity
100%
Magnetoresistance
33%