Organic field-effect transistors containing a SiO 2 nanoparticle thin film as the gate dielectric

Tianhong Cui, Guirong Liang, Jingshi Shi

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

In this article, we report the fabrication of organic field-effect transistors using self-assembled SiO 2 as a gate dielectric material and pentacene as a semiconductor. The dielectric layer was self-assembled with 10 layers of SiO 2 nanoparticles 45 nm in diameter, and its breakdown field was larger than 0.57 MV/cm. Being a low-cost and low-temperature process, the layer-by-layer self-assembly is particularly suitable for organic field-effect transistor fabrication. The pentacene was thermally evaporated on the substrate under high vacuum at the room temperature. The fabricated transistor has a threshold voltage of 0.3 V, field-effect mobility of 0.05 cm 2/Vs, and slope of 1.4 V/decade.

Original languageEnglish (US)
Pages (from-to)525-528
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume3
Issue number6
DOIs
StatePublished - Dec 1 2003

Keywords

  • Organic Field-Effect Transistor
  • Pentacene
  • Self-assembly
  • SiO Nanoparticle

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