Optimizing Ohmic contacts to Nd-doped n-type SrSnO3

V. R. Saran Kumar Chaganti; Prafful Golani; Tristan K. Truttmann; Fengdeng Liu; Bharat Jalan; Steven J. Koester

doi:10.1063/5.0027470

Optimizing Ohmic contacts to Nd-doped n-type SrSnO3

V. R. Saran Kumar Chaganti, Prafful Golani, Tristan K. Truttmann, Fengdeng Liu, Bharat Jalan, Steven J. Koester

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

We report the results of metal contact resistance, RC, to Nd-doped n-type SrSnO3 films grown by radical-based hybrid molecular beam epitaxy. Sc, Mn, Ti, Al, and Cr contact layers were deposited onto heavily doped SrSnO3 thin films. With no annealing, Al and Cr contacts were found to be highly resistive, while Sc, Mn, and Ti were more conductive, with Mn having the lowest RC of 11 ± 3 ω-mm, immediately after liftoff. After Al2O3 passivation at 200 °C, Sc, Mn, and Ti contacts all showed Ohmic behavior, with Ti contacts having RC = 2.4 ± 0.3 ω-mm and a resultant sheet resistance, RS, of 1.66 ± 0.07 kω/□. Specific contact resistivity, ρC, values of 0.03, 0.2, and 0.5 mω-cm2 were determined for Ti, Sc, and Mn, respectively. Annealing at 300 °C did not result in any significant change in RC. An additional study was performed using Ti-contacts on bi-layer films consisting of a heavily doped cap layer grown on a moderately doped active layer. It was found that the RC (ρC) of Ti metal to the bi-layer films was ∼1 (2) order(s) of magnitude lower than on single-layer controls. Temperature-dependent analysis was used to extract the barrier height and doping effect for annealed Ti contacts. This work is an important step in evaluating SrSnO3 for use in high-performance and transparent electronic applications.

Original language	English (US)
Article number	142104
Pages (from-to)	142104
Journal	Applied Physics Letters
Volume	118
Issue number	14
DOIs	https://doi.org/10.1063/5.0027470
State	Published - Apr 5 2021

Bibliographical note

Funding Information:
This work was primarily supported by the AFOSR through Award No. FA9550-19-1-0245. This work was supported partially by the National Science Foundation (NSF) through No. DMR-1741801 and the University of Minnesota MRSEC under Award No. DMR-2011401. Portions of this work were carried out in the Characterization Facility, University of Minnesota, which receives partial support from the NSF through the MRSEC under Award No. DMR-2011401 and the Minnesota Nano Center, which receives support from the NSF through the National Nanotechnology Coordinated Infrastructure (NNCI) under Award No. ECCS-2025124.

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https://aip.scitation.org/doi/10.1063/5.0027470

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@article{4170931dd67d46feb246d3cdb5ca7328,

title = "Optimizing Ohmic contacts to Nd-doped n-type SrSnO3",

abstract = "We report the results of metal contact resistance, RC, to Nd-doped n-type SrSnO3 films grown by radical-based hybrid molecular beam epitaxy. Sc, Mn, Ti, Al, and Cr contact layers were deposited onto heavily doped SrSnO3 thin films. With no annealing, Al and Cr contacts were found to be highly resistive, while Sc, Mn, and Ti were more conductive, with Mn having the lowest RC of 11 ± 3 ω-mm, immediately after liftoff. After Al2O3 passivation at 200 °C, Sc, Mn, and Ti contacts all showed Ohmic behavior, with Ti contacts having RC = 2.4 ± 0.3 ω-mm and a resultant sheet resistance, RS, of 1.66 ± 0.07 kω/□. Specific contact resistivity, ρC, values of 0.03, 0.2, and 0.5 mω-cm2 were determined for Ti, Sc, and Mn, respectively. Annealing at 300 °C did not result in any significant change in RC. An additional study was performed using Ti-contacts on bi-layer films consisting of a heavily doped cap layer grown on a moderately doped active layer. It was found that the RC (ρC) of Ti metal to the bi-layer films was ∼1 (2) order(s) of magnitude lower than on single-layer controls. Temperature-dependent analysis was used to extract the barrier height and doping effect for annealed Ti contacts. This work is an important step in evaluating SrSnO3 for use in high-performance and transparent electronic applications. ",

author = "{Saran Kumar Chaganti}, {V. R.} and Prafful Golani and Truttmann, {Tristan K.} and Fengdeng Liu and Bharat Jalan and Koester, {Steven J.}",

note = "Funding Information: This work was primarily supported by the AFOSR through Award No. FA9550-19-1-0245. This work was supported partially by the National Science Foundation (NSF) through No. DMR-1741801 and the University of Minnesota MRSEC under Award No. DMR-2011401. Portions of this work were carried out in the Characterization Facility, University of Minnesota, which receives partial support from the NSF through the MRSEC under Award No. DMR-2011401 and the Minnesota Nano Center, which receives support from the NSF through the National Nanotechnology Coordinated Infrastructure (NNCI) under Award No. ECCS-2025124. Publisher Copyright: {\textcopyright} 2021 Author(s).",

year = "2021",

month = apr,

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doi = "10.1063/5.0027470",

language = "English (US)",

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T1 - Optimizing Ohmic contacts to Nd-doped n-type SrSnO3

AU - Saran Kumar Chaganti, V. R.

AU - Golani, Prafful

AU - Truttmann, Tristan K.

AU - Liu, Fengdeng

AU - Jalan, Bharat

AU - Koester, Steven J.

N1 - Funding Information: This work was primarily supported by the AFOSR through Award No. FA9550-19-1-0245. This work was supported partially by the National Science Foundation (NSF) through No. DMR-1741801 and the University of Minnesota MRSEC under Award No. DMR-2011401. Portions of this work were carried out in the Characterization Facility, University of Minnesota, which receives partial support from the NSF through the MRSEC under Award No. DMR-2011401 and the Minnesota Nano Center, which receives support from the NSF through the National Nanotechnology Coordinated Infrastructure (NNCI) under Award No. ECCS-2025124. Publisher Copyright: © 2021 Author(s).

PY - 2021/4/5

Y1 - 2021/4/5

N2 - We report the results of metal contact resistance, RC, to Nd-doped n-type SrSnO3 films grown by radical-based hybrid molecular beam epitaxy. Sc, Mn, Ti, Al, and Cr contact layers were deposited onto heavily doped SrSnO3 thin films. With no annealing, Al and Cr contacts were found to be highly resistive, while Sc, Mn, and Ti were more conductive, with Mn having the lowest RC of 11 ± 3 ω-mm, immediately after liftoff. After Al2O3 passivation at 200 °C, Sc, Mn, and Ti contacts all showed Ohmic behavior, with Ti contacts having RC = 2.4 ± 0.3 ω-mm and a resultant sheet resistance, RS, of 1.66 ± 0.07 kω/□. Specific contact resistivity, ρC, values of 0.03, 0.2, and 0.5 mω-cm2 were determined for Ti, Sc, and Mn, respectively. Annealing at 300 °C did not result in any significant change in RC. An additional study was performed using Ti-contacts on bi-layer films consisting of a heavily doped cap layer grown on a moderately doped active layer. It was found that the RC (ρC) of Ti metal to the bi-layer films was ∼1 (2) order(s) of magnitude lower than on single-layer controls. Temperature-dependent analysis was used to extract the barrier height and doping effect for annealed Ti contacts. This work is an important step in evaluating SrSnO3 for use in high-performance and transparent electronic applications.

AB - We report the results of metal contact resistance, RC, to Nd-doped n-type SrSnO3 films grown by radical-based hybrid molecular beam epitaxy. Sc, Mn, Ti, Al, and Cr contact layers were deposited onto heavily doped SrSnO3 thin films. With no annealing, Al and Cr contacts were found to be highly resistive, while Sc, Mn, and Ti were more conductive, with Mn having the lowest RC of 11 ± 3 ω-mm, immediately after liftoff. After Al2O3 passivation at 200 °C, Sc, Mn, and Ti contacts all showed Ohmic behavior, with Ti contacts having RC = 2.4 ± 0.3 ω-mm and a resultant sheet resistance, RS, of 1.66 ± 0.07 kω/□. Specific contact resistivity, ρC, values of 0.03, 0.2, and 0.5 mω-cm2 were determined for Ti, Sc, and Mn, respectively. Annealing at 300 °C did not result in any significant change in RC. An additional study was performed using Ti-contacts on bi-layer films consisting of a heavily doped cap layer grown on a moderately doped active layer. It was found that the RC (ρC) of Ti metal to the bi-layer films was ∼1 (2) order(s) of magnitude lower than on single-layer controls. Temperature-dependent analysis was used to extract the barrier height and doping effect for annealed Ti contacts. This work is an important step in evaluating SrSnO3 for use in high-performance and transparent electronic applications.

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U2 - 10.1063/5.0027470

DO - 10.1063/5.0027470

M3 - Article

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Optimizing Ohmic contacts to Nd-doped n-type SrSnO3

Abstract

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IRG-1: Ionic Control of Materials

University of Minnesota Materials Research Science and Engineering Center (DMR-2011401)

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Optimizing Ohmic contacts to Nd-doped n-type SrSnO3

Abstract

Bibliographical note

MRSEC Support

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IRG-1: Ionic Control of Materials

University of Minnesota Materials Research Science and Engineering Center (DMR-2011401)

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