Optimized yttrium iron garnet growth on silicon for films with high faraday rotation

Andrew D. Block; Bethanie J H Stadler; Jordan Stoltz; Nicholas C A Seaton

Optimized yttrium iron garnet growth on silicon for films with high faraday rotation

Andrew D. Block, Bethanie J H Stadler, Jordan Stoltz, Nicholas C A Seaton

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Bismuth and cerium YIG films with Faraday rotations of 4000°/cm and 10000°/cm were obtained on Si, and a complete model for the growth and crystallization required to obtain such films is presented.

Original language	English (US)
Title of host publication	CLEO
Subtitle of host publication	QELS_Fundamental Science, CLEO:QELS FS 2013
State	Published - Nov 21 2013
Event	CLEO: QELS_Fundamental Science, CLEO:QELS FS 2013 - San Jose, CA, United States Duration: Jun 9 2013 → Jun 14 2013

Other

Other	CLEO: QELS_Fundamental Science, CLEO:QELS FS 2013
Country/Territory	United States
City	San Jose, CA
Period	6/9/13 → 6/14/13

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@inproceedings{5312df6fab0c4894935e73a4addc3ff3,

title = "Optimized yttrium iron garnet growth on silicon for films with high faraday rotation",

abstract = "Bismuth and cerium YIG films with Faraday rotations of 4000°/cm and 10000°/cm were obtained on Si, and a complete model for the growth and crystallization required to obtain such films is presented.",

author = "Block, {Andrew D.} and Stadler, {Bethanie J H} and Jordan Stoltz and Seaton, {Nicholas C A}",

year = "2013",

month = nov,

day = "21",

language = "English (US)",

isbn = "9781557529725",

booktitle = "CLEO",

note = "CLEO: QELS_Fundamental Science, CLEO:QELS FS 2013 ; Conference date: 09-06-2013 Through 14-06-2013",

}

TY - GEN

T1 - Optimized yttrium iron garnet growth on silicon for films with high faraday rotation

AU - Block, Andrew D.

AU - Stadler, Bethanie J H

AU - Stoltz, Jordan

AU - Seaton, Nicholas C A

PY - 2013/11/21

Y1 - 2013/11/21

N2 - Bismuth and cerium YIG films with Faraday rotations of 4000°/cm and 10000°/cm were obtained on Si, and a complete model for the growth and crystallization required to obtain such films is presented.

AB - Bismuth and cerium YIG films with Faraday rotations of 4000°/cm and 10000°/cm were obtained on Si, and a complete model for the growth and crystallization required to obtain such films is presented.

UR - http://www.scopus.com/inward/record.url?scp=84887736437&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84887736437&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84887736437

SN - 9781557529725

BT - CLEO

T2 - CLEO: QELS_Fundamental Science, CLEO:QELS FS 2013

Y2 - 9 June 2013 through 14 June 2013

ER -

Optimized yttrium iron garnet growth on silicon for films with high faraday rotation

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