Abstract
The authors report the growth, structural and electrical characterizations of SrTi O3 films deposited on conductive SrTi O3: Nb (001) substrates by high pressure reactive rf magnetron sputtering. Optimized deposition parameters yield smooth epitaxial layers of high crystalline perfection with a room temperature dielectric constant ∼200 (for a thickness of 1150 Å). The breakdown fields in SrTi O3: NbSrTi O3 Ag capacitors are consistent with induced charge densities >1× 1014 cm-2 for both holes and electrons, making these films ideal for high charge density field effect devices.
| Original language | English (US) |
|---|---|
| Article number | 242915 |
| Journal | Applied Physics Letters |
| Volume | 89 |
| Issue number | 24 |
| DOIs | |
| State | Published - Dec 29 2006 |
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Optimized dielectric properties of SrTiO 3 : Nb/SrTiO 3 (001) films for high field effect charge densities. / Cai, Xiuyu; Frisbie, C. Daniel; Leighton, C.
In: Applied Physics Letters, Vol. 89, No. 24, 242915, 29.12.2006.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Optimized dielectric properties of SrTiO 3
T2 - Nb/SrTiO 3 (001) films for high field effect charge densities
AU - Cai, Xiuyu
AU - Frisbie, C. Daniel
AU - Leighton, C.
PY - 2006/12/29
Y1 - 2006/12/29
N2 - The authors report the growth, structural and electrical characterizations of SrTi O3 films deposited on conductive SrTi O3: Nb (001) substrates by high pressure reactive rf magnetron sputtering. Optimized deposition parameters yield smooth epitaxial layers of high crystalline perfection with a room temperature dielectric constant ∼200 (for a thickness of 1150 Å). The breakdown fields in SrTi O3: NbSrTi O3 Ag capacitors are consistent with induced charge densities >1× 1014 cm-2 for both holes and electrons, making these films ideal for high charge density field effect devices.
AB - The authors report the growth, structural and electrical characterizations of SrTi O3 films deposited on conductive SrTi O3: Nb (001) substrates by high pressure reactive rf magnetron sputtering. Optimized deposition parameters yield smooth epitaxial layers of high crystalline perfection with a room temperature dielectric constant ∼200 (for a thickness of 1150 Å). The breakdown fields in SrTi O3: NbSrTi O3 Ag capacitors are consistent with induced charge densities >1× 1014 cm-2 for both holes and electrons, making these films ideal for high charge density field effect devices.
UR - http://www.scopus.com/inward/record.url?scp=33845766281&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33845766281&partnerID=8YFLogxK
U2 - 10.1063/1.2404610
DO - 10.1063/1.2404610
M3 - Article
AN - SCOPUS:33845766281
VL - 89
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 24
M1 - 242915
ER -