Optimized dielectric properties of SrTiO 3: Nb/SrTiO 3 (001) films for high field effect charge densities

Xiuyu Cai; C. Daniel Frisbie; C. Leighton

doi:10.1063/1.2404610

Optimized dielectric properties of SrTiO ₃: Nb/SrTiO ₃ (001) films for high field effect charge densities

Xiuyu Cai, C. Daniel Frisbie, C. Leighton

Chemical Engineering and Materials Science

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

The authors report the growth, structural and electrical characterizations of SrTi O3 films deposited on conductive SrTi O3: Nb (001) substrates by high pressure reactive rf magnetron sputtering. Optimized deposition parameters yield smooth epitaxial layers of high crystalline perfection with a room temperature dielectric constant ∼200 (for a thickness of 1150 Å). The breakdown fields in SrTi O3: NbSrTi O3 Ag capacitors are consistent with induced charge densities >1× 1014 cm-2 for both holes and electrons, making these films ideal for high charge density field effect devices.

Original language	English (US)
Article number	242915
Journal	Applied Physics Letters
Volume	89
Issue number	24
DOIs	https://doi.org/10.1063/1.2404610
State	Published - 2006

Bibliographical note

Funding Information:
This work was supported by NSF Grant No. 0509666 and the NSF MRSEC. K.C. would like to acknowledge Jeff Parker for advice on sputtering.

Copyright:
Copyright 2011 Elsevier B.V., All rights reserved.

Publisher link

10.1063/1.2404610

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title = "Optimized dielectric properties of SrTiO 3: Nb/SrTiO 3 (001) films for high field effect charge densities",

abstract = "The authors report the growth, structural and electrical characterizations of SrTi O3 films deposited on conductive SrTi O3: Nb (001) substrates by high pressure reactive rf magnetron sputtering. Optimized deposition parameters yield smooth epitaxial layers of high crystalline perfection with a room temperature dielectric constant ∼200 (for a thickness of 1150 {\AA}). The breakdown fields in SrTi O3: NbSrTi O3 Ag capacitors are consistent with induced charge densities >1× 1014 cm-2 for both holes and electrons, making these films ideal for high charge density field effect devices.",

author = "Xiuyu Cai and Frisbie, {C. Daniel} and C. Leighton",

note = "Funding Information: This work was supported by NSF Grant No. 0509666 and the NSF MRSEC. K.C. would like to acknowledge Jeff Parker for advice on sputtering. Copyright: Copyright 2011 Elsevier B.V., All rights reserved.",

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AU - Frisbie, C. Daniel

AU - Leighton, C.

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N2 - The authors report the growth, structural and electrical characterizations of SrTi O3 films deposited on conductive SrTi O3: Nb (001) substrates by high pressure reactive rf magnetron sputtering. Optimized deposition parameters yield smooth epitaxial layers of high crystalline perfection with a room temperature dielectric constant ∼200 (for a thickness of 1150 Å). The breakdown fields in SrTi O3: NbSrTi O3 Ag capacitors are consistent with induced charge densities >1× 1014 cm-2 for both holes and electrons, making these films ideal for high charge density field effect devices.

AB - The authors report the growth, structural and electrical characterizations of SrTi O3 films deposited on conductive SrTi O3: Nb (001) substrates by high pressure reactive rf magnetron sputtering. Optimized deposition parameters yield smooth epitaxial layers of high crystalline perfection with a room temperature dielectric constant ∼200 (for a thickness of 1150 Å). The breakdown fields in SrTi O3: NbSrTi O3 Ag capacitors are consistent with induced charge densities >1× 1014 cm-2 for both holes and electrons, making these films ideal for high charge density field effect devices.

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