Optimized dielectric properties of SrTiO 3: Nb/SrTiO 3 (001) films for high field effect charge densities

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Abstract

The authors report the growth, structural and electrical characterizations of SrTi O3 films deposited on conductive SrTi O3: Nb (001) substrates by high pressure reactive rf magnetron sputtering. Optimized deposition parameters yield smooth epitaxial layers of high crystalline perfection with a room temperature dielectric constant ∼200 (for a thickness of 1150 Å). The breakdown fields in SrTi O3: NbSrTi O3 Ag capacitors are consistent with induced charge densities >1× 1014 cm-2 for both holes and electrons, making these films ideal for high charge density field effect devices.

Original languageEnglish (US)
Article number242915
JournalApplied Physics Letters
Volume89
Issue number24
DOIs
StatePublished - Dec 29 2006

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dielectric properties
capacitors
magnetron sputtering
breakdown
permittivity
room temperature
electrons

Cite this

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abstract = "The authors report the growth, structural and electrical characterizations of SrTi O3 films deposited on conductive SrTi O3: Nb (001) substrates by high pressure reactive rf magnetron sputtering. Optimized deposition parameters yield smooth epitaxial layers of high crystalline perfection with a room temperature dielectric constant ∼200 (for a thickness of 1150 {\AA}). The breakdown fields in SrTi O3: NbSrTi O3 Ag capacitors are consistent with induced charge densities >1× 1014 cm-2 for both holes and electrons, making these films ideal for high charge density field effect devices.",
author = "Xiuyu Cai and Frisbie, {C. Daniel} and C. Leighton",
year = "2006",
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language = "English (US)",
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T1 - Optimized dielectric properties of SrTiO 3

T2 - Nb/SrTiO 3 (001) films for high field effect charge densities

AU - Cai, Xiuyu

AU - Frisbie, C. Daniel

AU - Leighton, C.

PY - 2006/12/29

Y1 - 2006/12/29

N2 - The authors report the growth, structural and electrical characterizations of SrTi O3 films deposited on conductive SrTi O3: Nb (001) substrates by high pressure reactive rf magnetron sputtering. Optimized deposition parameters yield smooth epitaxial layers of high crystalline perfection with a room temperature dielectric constant ∼200 (for a thickness of 1150 Å). The breakdown fields in SrTi O3: NbSrTi O3 Ag capacitors are consistent with induced charge densities >1× 1014 cm-2 for both holes and electrons, making these films ideal for high charge density field effect devices.

AB - The authors report the growth, structural and electrical characterizations of SrTi O3 films deposited on conductive SrTi O3: Nb (001) substrates by high pressure reactive rf magnetron sputtering. Optimized deposition parameters yield smooth epitaxial layers of high crystalline perfection with a room temperature dielectric constant ∼200 (for a thickness of 1150 Å). The breakdown fields in SrTi O3: NbSrTi O3 Ag capacitors are consistent with induced charge densities >1× 1014 cm-2 for both holes and electrons, making these films ideal for high charge density field effect devices.

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JF - Applied Physics Letters

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