Optimization of staggered heterojunction p-TFETs for LSTP and LOP applications

E. Baravelli; E. Gnani; R. Grassi; A. Gundi; G. Baccarani

doi:10.1109/DRC.2013.6633796

Optimization of staggered heterojunction p-TFETs for LSTP and LOP applications

E. Baravelli, E. Gnani, R. Grassi, A. Gundi, G. Baccarani

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Scopus citations

Abstract

Effect of transverse quantization on the broken vs. staggered band lineup of InAs/Al _xGa_1-xSb TFETs is investigated, showing that cross-sections up to 1 0nm lead to staggered configurations for any value of the Al mole fraction x. Device performance is optimized as a function of cross-sectional size, Al content and possible source/channel underlap, while ensuring low standby power (LSTP) or low operating power (LOP) compatible off-current levels. Guidelines are provided and an 'optimal' design is proposed which provides a minimum sub-threshold slope (SS) of 7.2 mV/dec along with a maximum on-state current (I_On) of 175μ/μm.

Original language	English (US)
Title of host publication	71st Device Research Conference, DRC 2013 - Conference Digest
Pages	67-68
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2013.6633796
State	Published - Dec 16 2013
Event	71st Device Research Conference, DRC 2013 - Notre Dame, IN, United States Duration: Jun 23 2013 → Jun 26 2013

Other

Other	71st Device Research Conference, DRC 2013
Country	United States
City	Notre Dame, IN
Period	6/23/13 → 6/26/13

Access

10.1109/DRC.2013.6633796

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Baravelli, E., Gnani, E., Grassi, R., Gundi, A., & Baccarani, G. (2013). Optimization of staggered heterojunction p-TFETs for LSTP and LOP applications. In 71st Device Research Conference, DRC 2013 - Conference Digest (pp. 67-68). [6633796] https://doi.org/10.1109/DRC.2013.6633796

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abstract = "Effect of transverse quantization on the broken vs. staggered band lineup of InAs/Al xGa1-xSb TFETs is investigated, showing that cross-sections up to 1 0nm lead to staggered configurations for any value of the Al mole fraction x. Device performance is optimized as a function of cross-sectional size, Al content and possible source/channel underlap, while ensuring low standby power (LSTP) or low operating power (LOP) compatible off-current levels. Guidelines are provided and an 'optimal' design is proposed which provides a minimum sub-threshold slope (SS) of 7.2 mV/dec along with a maximum on-state current (IOn) of 175μ/μm.",

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AU - Baccarani, G.

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AB - Effect of transverse quantization on the broken vs. staggered band lineup of InAs/Al xGa1-xSb TFETs is investigated, showing that cross-sections up to 1 0nm lead to staggered configurations for any value of the Al mole fraction x. Device performance is optimized as a function of cross-sectional size, Al content and possible source/channel underlap, while ensuring low standby power (LSTP) or low operating power (LOP) compatible off-current levels. Guidelines are provided and an 'optimal' design is proposed which provides a minimum sub-threshold slope (SS) of 7.2 mV/dec along with a maximum on-state current (IOn) of 175μ/μm.

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