Abstract
Effect of transverse quantization on the broken vs. staggered band lineup of InAs/Al xGa1-xSb TFETs is investigated, showing that cross-sections up to 1 0nm lead to staggered configurations for any value of the Al mole fraction x. Device performance is optimized as a function of cross-sectional size, Al content and possible source/channel underlap, while ensuring low standby power (LSTP) or low operating power (LOP) compatible off-current levels. Guidelines are provided and an 'optimal' design is proposed which provides a minimum sub-threshold slope (SS) of 7.2 mV/dec along with a maximum on-state current (IOn) of 175μ/μm.
Original language | English (US) |
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Title of host publication | 71st Device Research Conference, DRC 2013 - Conference Digest |
Pages | 67-68 |
Number of pages | 2 |
DOIs | |
State | Published - Dec 16 2013 |
Event | 71st Device Research Conference, DRC 2013 - Notre Dame, IN, United States Duration: Jun 23 2013 → Jun 26 2013 |
Other
Other | 71st Device Research Conference, DRC 2013 |
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Country/Territory | United States |
City | Notre Dame, IN |
Period | 6/23/13 → 6/26/13 |