Optimization of n-and p-type TFETs integrated on the same InAs/Al xGa1-xSb technology platform

Emanuele Baravelli, Elena Gnani, Roberto Grassi, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani

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44 Scopus citations

Abstract

Design of a suitable technology platform is carried out in this paper for co-integration of simultaneously optimized n-and p-type tunnel field-effect transistors (TFETs). InAs/AlxGa1-xSb heterostructures are considered, and a 3-D full-quantum simulation approach is adopted to investigate the combined effect of Al mole fraction x and transverse quantization on band lineups at the heterojunction. Design optimization leads to a TFET pair with similar dimensions and feasible aspect ratios realized on the same InAs/Al 0.05Ga0.95Sb platform. These devices exhibit average subthreshold slopes below 60 mV/dec and relatively high ON-currents of 270 (n-TFET) and 120 μA/μm (p-TFET) at a low-supply voltage VDD =0.4 V. Combined ON-and OFF-state performance of the proposed technology platform is expected to be compatible with low operating power applications, while potential candidates for low standby power scenarios are obtained by reducing TFET cross sections from 10 to 7 nm.

Original languageEnglish (US)
Article number6670064
Pages (from-to)178-185
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume61
Issue number1
DOIs
StatePublished - Jan 2014

Keywords

  • III-V materials
  • TFET
  • heterojunction
  • subthreshold slope (SS)

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