Source/drain stressors in FinFET-based circuits lose their effectiveness at smaller contacted gate pitches. To improve circuit performance, a dual gate pitch technique is proposed in this work, where standard cells with double the gate pitch are selectively used on the gates of the circuit critical paths, at minimal area and power costs. A stress-aware library characterization is performed for FinFET-based standard cells by obtaining stress distributions using finite element simulations on a subset of structures. The stresses are then employed to create look-up tables for mobility multipliers and threshold voltage shifts, for subsequent performance characterization of FinFET-based standard cells. Finally, a circuit delay optimizer is applied using the dual gate pitch approach and is compared with an alternative gate sizing approach. Using a combination of gate sizing and the dual gate pitch approach, it is shown that the average power delay product improves by 12.9% and 15.9% in 14nm and 10nm technologies, respectively.