Optimal doping profile for laser-induced diode linking in wafer-scale-integration

Peng Fang, Ming I. Sun, T. M. Chen

Research output: Contribution to journalConference article

Abstract

The optimum doping profile for the minimum resistance of a laser-induced diode link is studied by using the calculus of variations and the method of Lagrange multipliers. It is shown that the uniform distribution of the carriers in the link gives the minimum link resistance. It is also found that, in a practical laser-induced diode link with Gaussian carrier distribution, the resultant link resistance can approach the optimum resistance value if the carrier diffusion time is chosen properly. If the laser pulse is too short, the link resistance can be much larger than the optimum value. On the other hand, if the duration is too long, the link resistance does not change significantly.

Original languageEnglish (US)
Pages (from-to)1421-1423
Number of pages3
JournalConference Proceedings - IEEE SOUTHEASTCON
Volume3
StatePublished - Dec 1 1989
Externally publishedYes
EventProceedings - Energy and Information Technologies in the Southeast - Columbia, SC, USA
Duration: Apr 9 1989Apr 12 1989

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WSI circuits
Diodes
Doping (additives)
Lasers
Lagrange multipliers
Laser pulses

Cite this

Optimal doping profile for laser-induced diode linking in wafer-scale-integration. / Fang, Peng; Sun, Ming I.; Chen, T. M.

In: Conference Proceedings - IEEE SOUTHEASTCON, Vol. 3, 01.12.1989, p. 1421-1423.

Research output: Contribution to journalConference article

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