Optical property theoretical study and mild-temperature synthesis of (Ga,Zn)N nanocrystals

Naifeng Zhuang; Lin Wei; Yinhua Li; Yongfan Zhang; Xiaolin Hu; Jianzhong Chen; Junqian Li

doi:10.1016/j.cplett.2013.10.055

Optical property theoretical study and mild-temperature synthesis of (Ga,Zn)N nanocrystals

Naifeng Zhuang
, Lin Wei
, Yinhua Li
, Yongfan Zhang
, Xiaolin Hu
, Jianzhong Chen
, Junqian Li

Research output: Contribution to journal › Article › peer-review

Abstract

Wurtzite GaN and (Ga,Zn)N nanocrystals with the size of 8-20 nm were synthesized by the solid-phase thermal decomposition method at mild temperature of 350-650 C. This synthesis method is a simple and low cost method. From the further study on the luminescence mechanism, Zn dopant introduces new energy levels in the band gap of GaN nanocrystals, which effectively induces the fluorescence emission in the visible region. In addition, the V_N-H defect significantly affects the optical properties of nanocrystals. Moreover, GaN nanocrystals with a proper Zn-doping concentration will produce a white light.

Original language	English (US)
Pages (from-to)	116-120
Number of pages	5
Journal	Chemical Physics Letters
Volume	590
DOIs	https://doi.org/10.1016/j.cplett.2013.10.055
State	Published - Dec 18 2013
Externally published	Yes

Bibliographical note

Funding Information:
We gratefully acknowledge the financial support from the financial support from the Natural Science Foundation for Young Scholars of China (61008040, 51272044, 21001026), the Natural Science Foundation of Fujian Province (2012J01033, 2013J01180), and the Talent Foundation of Fuzhou University (XRC-1012).

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@article{93d66386a7c642b7a3e7dc2646418875,

title = "Optical property theoretical study and mild-temperature synthesis of (Ga,Zn)N nanocrystals",

abstract = "Wurtzite GaN and (Ga,Zn)N nanocrystals with the size of 8-20 nm were synthesized by the solid-phase thermal decomposition method at mild temperature of 350-650 C. This synthesis method is a simple and low cost method. From the further study on the luminescence mechanism, Zn dopant introduces new energy levels in the band gap of GaN nanocrystals, which effectively induces the fluorescence emission in the visible region. In addition, the VN-H defect significantly affects the optical properties of nanocrystals. Moreover, GaN nanocrystals with a proper Zn-doping concentration will produce a white light.",

author = "Naifeng Zhuang and Lin Wei and Yinhua Li and Yongfan Zhang and Xiaolin Hu and Jianzhong Chen and Junqian Li",

note = "Funding Information: We gratefully acknowledge the financial support from the financial support from the Natural Science Foundation for Young Scholars of China (61008040, 51272044, 21001026), the Natural Science Foundation of Fujian Province (2012J01033, 2013J01180), and the Talent Foundation of Fuzhou University (XRC-1012).",

year = "2013",

month = dec,

day = "18",

doi = "10.1016/j.cplett.2013.10.055",

language = "English (US)",

volume = "590",

pages = "116--120",

journal = "Chemical Physics Letters",

issn = "0009-2614",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Optical property theoretical study and mild-temperature synthesis of (Ga,Zn)N nanocrystals

AU - Zhuang, Naifeng

AU - Wei, Lin

AU - Li, Yinhua

AU - Zhang, Yongfan

AU - Hu, Xiaolin

AU - Chen, Jianzhong

AU - Li, Junqian

N1 - Funding Information: We gratefully acknowledge the financial support from the financial support from the Natural Science Foundation for Young Scholars of China (61008040, 51272044, 21001026), the Natural Science Foundation of Fujian Province (2012J01033, 2013J01180), and the Talent Foundation of Fuzhou University (XRC-1012).

PY - 2013/12/18

Y1 - 2013/12/18

N2 - Wurtzite GaN and (Ga,Zn)N nanocrystals with the size of 8-20 nm were synthesized by the solid-phase thermal decomposition method at mild temperature of 350-650 C. This synthesis method is a simple and low cost method. From the further study on the luminescence mechanism, Zn dopant introduces new energy levels in the band gap of GaN nanocrystals, which effectively induces the fluorescence emission in the visible region. In addition, the VN-H defect significantly affects the optical properties of nanocrystals. Moreover, GaN nanocrystals with a proper Zn-doping concentration will produce a white light.

AB - Wurtzite GaN and (Ga,Zn)N nanocrystals with the size of 8-20 nm were synthesized by the solid-phase thermal decomposition method at mild temperature of 350-650 C. This synthesis method is a simple and low cost method. From the further study on the luminescence mechanism, Zn dopant introduces new energy levels in the band gap of GaN nanocrystals, which effectively induces the fluorescence emission in the visible region. In addition, the VN-H defect significantly affects the optical properties of nanocrystals. Moreover, GaN nanocrystals with a proper Zn-doping concentration will produce a white light.

UR - https://www.scopus.com/pages/publications/84890115706

UR - https://www.scopus.com/pages/publications/84890115706#tab=citedBy

U2 - 10.1016/j.cplett.2013.10.055

DO - 10.1016/j.cplett.2013.10.055

M3 - Article

AN - SCOPUS:84890115706

SN - 0009-2614

VL - 590

SP - 116

EP - 120

JO - Chemical Physics Letters

JF - Chemical Physics Letters

ER -

Optical property theoretical study and mild-temperature synthesis of (Ga,Zn)N nanocrystals

Abstract

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