Optical and electrical spin injection and spin transport in hybrid Fe/GaAs devices

S. A. Crooker; M. Furis; X. Lou; P. A. Crowell; D. L. Smith; C. Adelmann; C. J. Palmstrøm

doi:10.1063/1.2722785

Optical and electrical spin injection and spin transport in hybrid Fe/GaAs devices

S. A. Crooker, M. Furis, X. Lou, P. A. Crowell, D. L. Smith, C. Adelmann, C. J. Palmstrøm

Physics and Astronomy (Twin Cities)

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

We discuss methods for imaging the nonequilibrium spin polarization of electrons in Fe/GaAs spin transport devices. Both optically and electrically injected spin distributions are studied by scanning magneto-optical Kerr rotation microscopy. Related methods are used to demonstrate electrical spin detection of optically injected spin-polarized currents. Dynamical properties of spin transport are inferred from studies based on the Hanle effect, and the influence of strain on spin transport data in these devices is discussed.

Original language	English (US)
Article number	081716
Journal	Journal of Applied Physics
Volume	101
Issue number	8
DOIs	https://doi.org/10.1063/1.2722785
State	Published - 2007

Bibliographical note

Funding Information:
This work was supported by the DARPA SpinS and Los Alamos LDRD programs, the NSF MRSEC program under Grant No. DMR 02-12302, the Office of Naval Research, and the Minnesota Nanofabrication Center, which is supported by the NSF NNIN program.

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abstract = "We discuss methods for imaging the nonequilibrium spin polarization of electrons in Fe/GaAs spin transport devices. Both optically and electrically injected spin distributions are studied by scanning magneto-optical Kerr rotation microscopy. Related methods are used to demonstrate electrical spin detection of optically injected spin-polarized currents. Dynamical properties of spin transport are inferred from studies based on the Hanle effect, and the influence of strain on spin transport data in these devices is discussed.",

author = "Crooker, {S. A.} and M. Furis and X. Lou and Crowell, {P. A.} and Smith, {D. L.} and C. Adelmann and Palmstr{\o}m, {C. J.}",

note = "Funding Information: This work was supported by the DARPA SpinS and Los Alamos LDRD programs, the NSF MRSEC program under Grant No. DMR 02-12302, the Office of Naval Research, and the Minnesota Nanofabrication Center, which is supported by the NSF NNIN program.",

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T1 - Optical and electrical spin injection and spin transport in hybrid Fe/GaAs devices

AU - Crooker, S. A.

AU - Furis, M.

AU - Lou, X.

AU - Crowell, P. A.

AU - Smith, D. L.

AU - Adelmann, C.

AU - Palmstrøm, C. J.

N1 - Funding Information: This work was supported by the DARPA SpinS and Los Alamos LDRD programs, the NSF MRSEC program under Grant No. DMR 02-12302, the Office of Naval Research, and the Minnesota Nanofabrication Center, which is supported by the NSF NNIN program.

PY - 2007

Y1 - 2007

N2 - We discuss methods for imaging the nonequilibrium spin polarization of electrons in Fe/GaAs spin transport devices. Both optically and electrically injected spin distributions are studied by scanning magneto-optical Kerr rotation microscopy. Related methods are used to demonstrate electrical spin detection of optically injected spin-polarized currents. Dynamical properties of spin transport are inferred from studies based on the Hanle effect, and the influence of strain on spin transport data in these devices is discussed.

AB - We discuss methods for imaging the nonequilibrium spin polarization of electrons in Fe/GaAs spin transport devices. Both optically and electrically injected spin distributions are studied by scanning magneto-optical Kerr rotation microscopy. Related methods are used to demonstrate electrical spin detection of optically injected spin-polarized currents. Dynamical properties of spin transport are inferred from studies based on the Hanle effect, and the influence of strain on spin transport data in these devices is discussed.

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ER -

Optical and electrical spin injection and spin transport in hybrid Fe/GaAs devices

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