Doping modulated amorphous semiconductors have been made by silane plasma deposition in a two-chamber transfer system. The properties of a multilayer sample consisting of many 275 A thick n- and p- type layers are discussed. The photoconductivity is characterized by a normal short recombination process and one with a lifetime of days. The latter yields at 300 degree K a long-lived persistent excess conductivity (PPC) that anneals away near 450 degree K. The PPC might be due to the internal fields that separate electron-hole pairs and hinders recombination.
|Original language||English (US)|
|Title of host publication||Unknown Host Publication Title|
|Editors||James D. Chadi, Walter A. Harrison|
|Number of pages||4|
|State||Published - Dec 1 1985|