OPTICAL AND ELECTRICAL PROPERTIES OF AMORPHOUS SEMICONDUCTOR DOPING SUPERLATTICES.

J. Kakalios, H. Fritzsche

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Doping modulated amorphous semiconductors have been made by silane plasma deposition in a two-chamber transfer system. The properties of a multilayer sample consisting of many 275 A thick n- and p- type layers are discussed. The photoconductivity is characterized by a normal short recombination process and one with a lifetime of days. The latter yields at 300 degree K a long-lived persistent excess conductivity (PPC) that anneals away near 450 degree K. The PPC might be due to the internal fields that separate electron-hole pairs and hinders recombination.

Original languageEnglish (US)
Title of host publicationUnknown Host Publication Title
EditorsJames D. Chadi, Walter A. Harrison
PublisherSpringer- Verlag
Pages503-506
Number of pages4
ISBN (Print)0387961089
StatePublished - Dec 1 1985

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