OPTICAL AND ELECTRICAL PROPERTIES OF AMORPHOUS SEMICONDUCTOR DOPING SUPERLATTICES.

J. Kakalios; H. Fritzsche

doi:10.1007/978-1-4615-7682-2_110

OPTICAL AND ELECTRICAL PROPERTIES OF AMORPHOUS SEMICONDUCTOR DOPING SUPERLATTICES.

J. Kakalios, H. Fritzsche

Physics and Astronomy (Twin Cities)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

Doping modulated amorphous semiconductors have been made by silane plasma deposition in a two-chamber transfer system. The properties of a multilayer sample consisting of many 275 A thick n- and p- type layers are discussed. The photoconductivity is characterized by a normal short recombination process and one with a lifetime of days. The latter yields at 300 degree K a long-lived persistent excess conductivity (PPC) that anneals away near 450 degree K. The PPC might be due to the internal fields that separate electron-hole pairs and hinders recombination.

Original language	English (US)
Title of host publication	Unknown Host Publication Title
Publisher	Springer Verlag
Pages	503-506
Number of pages	4
ISBN (Print)	0387961089, 9780387961088
DOIs	https://doi.org/10.1007/978-1-4615-7682-2_110
State	Published - 1985

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title = "OPTICAL AND ELECTRICAL PROPERTIES OF AMORPHOUS SEMICONDUCTOR DOPING SUPERLATTICES.",

abstract = "Doping modulated amorphous semiconductors have been made by silane plasma deposition in a two-chamber transfer system. The properties of a multilayer sample consisting of many 275 A thick n- and p- type layers are discussed. The photoconductivity is characterized by a normal short recombination process and one with a lifetime of days. The latter yields at 300 degree K a long-lived persistent excess conductivity (PPC) that anneals away near 450 degree K. The PPC might be due to the internal fields that separate electron-hole pairs and hinders recombination.",

author = "J. Kakalios and H. Fritzsche",

year = "1985",

doi = "10.1007/978-1-4615-7682-2_110",

language = "English (US)",

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AU - Fritzsche, H.

PY - 1985

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N2 - Doping modulated amorphous semiconductors have been made by silane plasma deposition in a two-chamber transfer system. The properties of a multilayer sample consisting of many 275 A thick n- and p- type layers are discussed. The photoconductivity is characterized by a normal short recombination process and one with a lifetime of days. The latter yields at 300 degree K a long-lived persistent excess conductivity (PPC) that anneals away near 450 degree K. The PPC might be due to the internal fields that separate electron-hole pairs and hinders recombination.

AB - Doping modulated amorphous semiconductors have been made by silane plasma deposition in a two-chamber transfer system. The properties of a multilayer sample consisting of many 275 A thick n- and p- type layers are discussed. The photoconductivity is characterized by a normal short recombination process and one with a lifetime of days. The latter yields at 300 degree K a long-lived persistent excess conductivity (PPC) that anneals away near 450 degree K. The PPC might be due to the internal fields that separate electron-hole pairs and hinders recombination.

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U2 - 10.1007/978-1-4615-7682-2_110

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SN - 9780387961088

SP - 503

EP - 506

BT - Unknown Host Publication Title

PB - Springer Verlag

ER -

OPTICAL AND ELECTRICAL PROPERTIES OF AMORPHOUS SEMICONDUCTOR DOPING SUPERLATTICES.

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