Operation of a novel negative differential conductance transistor fabricated in a strained Si quantum well

S. J. Koester; K. Ismail; K. Y. Lee; J. O. Chu

doi:10.1109/55.622520

Operation of a novel negative differential conductance transistor fabricated in a strained Si quantum well

S. J. Koester, K. Ismail, K. Y. Lee, J. O. Chu

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13 Scopus citations

Abstract

The operation of a negative differential conductance (NDC) transistor fabricated on a high-mobility Si/Si_1-xGe_x heterostructure wafer is described. The drain characteristic of this device shows a large NDC with current peak-to-valley ratios as high as 600 (100) at T = 0.4 K (T = 1.3 K). The NDC can be modulated over a wide range of current levels by either of two separately-contacted gate electrodes. The device shows bistable switching behavior in both current- and voltage-controlled circuit configurations. The novel operating principle of this transistor is described, along with its potential for future logic and memory applications.

Original language	English (US)
Pages (from-to)	432-434
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	18
Issue number	9
DOIs	https://doi.org/10.1109/55.622520
State	Published - Sep 1997
Externally published	Yes

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title = "Operation of a novel negative differential conductance transistor fabricated in a strained Si quantum well",

abstract = "The operation of a negative differential conductance (NDC) transistor fabricated on a high-mobility Si/Si1-xGex heterostructure wafer is described. The drain characteristic of this device shows a large NDC with current peak-to-valley ratios as high as 600 (100) at T = 0.4 K (T = 1.3 K). The NDC can be modulated over a wide range of current levels by either of two separately-contacted gate electrodes. The device shows bistable switching behavior in both current- and voltage-controlled circuit configurations. The novel operating principle of this transistor is described, along with its potential for future logic and memory applications.",

author = "Koester, {S. J.} and K. Ismail and Lee, {K. Y.} and Chu, {J. O.}",

year = "1997",

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AU - Koester, S. J.

AU - Ismail, K.

AU - Lee, K. Y.

AU - Chu, J. O.

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Y1 - 1997/9

N2 - The operation of a negative differential conductance (NDC) transistor fabricated on a high-mobility Si/Si1-xGex heterostructure wafer is described. The drain characteristic of this device shows a large NDC with current peak-to-valley ratios as high as 600 (100) at T = 0.4 K (T = 1.3 K). The NDC can be modulated over a wide range of current levels by either of two separately-contacted gate electrodes. The device shows bistable switching behavior in both current- and voltage-controlled circuit configurations. The novel operating principle of this transistor is described, along with its potential for future logic and memory applications.

AB - The operation of a negative differential conductance (NDC) transistor fabricated on a high-mobility Si/Si1-xGex heterostructure wafer is described. The drain characteristic of this device shows a large NDC with current peak-to-valley ratios as high as 600 (100) at T = 0.4 K (T = 1.3 K). The NDC can be modulated over a wide range of current levels by either of two separately-contacted gate electrodes. The device shows bistable switching behavior in both current- and voltage-controlled circuit configurations. The novel operating principle of this transistor is described, along with its potential for future logic and memory applications.

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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ER -

Operation of a novel negative differential conductance transistor fabricated in a strained Si quantum well

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