On the design of GaN vertical MESFETs on commercial LED sapphire wafers

Mahmoud R.M. Atalla; Asim M. Noor Elahi; Chen Mo; Zhenyu Jiang; Jie Liu; S. Ashok; Jian Xu

doi:10.1016/j.sse.2016.09.019

On the design of GaN vertical MESFETs on commercial LED sapphire wafers

Mahmoud R.M. Atalla, Asim M. Noor Elahi, Chen Mo, Zhenyu Jiang, Jie Liu, S. Ashok, Jian Xu

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Design of GaN-based vertical metal-semiconductor field-effect transistors (MESFETs) on commercial light-emitting-diode (LED) epi-wafers has been proposed and proof of principle devices have been fabricated. In order to better understand the IV curves, these devices have been simulated using the charge transport model. It was found that shrinking the drain pillar size would significantly help in reaching cut-off at much lower gate bias even at high carrier concentration of unintentionally doped GaN and considerable leakage current caused by the Schottky barrier lowering. The realization of these vertical MESFETs on LED wafers would allow their chip-level integration. This would open a way to many intelligent lighting applications like on-chip current regulator and signal regulation/communication in display technology.

Original language	English (US)
Pages (from-to)	23-31
Number of pages	9
Journal	Solid-State Electronics
Volume	126
DOIs	https://doi.org/10.1016/j.sse.2016.09.019
State	Published - Dec 1 2016

Bibliographical note

Funding Information:
MRMA thanks the Egyptian Ministry of Higher Education for funding his research activities. Prof. J. Xu acknowledges the funding support from NSF CAREER Grant No. 415-37 60D2 .

Publisher Copyright:
© 2016 Elsevier Ltd

Keywords

Charge transport model
Commercial LED wafers
LT GaN buffer layer
Schottky barrier lowering
Vertical MESFETs

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10.1016/j.sse.2016.09.019

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@article{af024ab7cd834aed92420980073bff2a,

title = "On the design of GaN vertical MESFETs on commercial LED sapphire wafers",

abstract = "Design of GaN-based vertical metal-semiconductor field-effect transistors (MESFETs) on commercial light-emitting-diode (LED) epi-wafers has been proposed and proof of principle devices have been fabricated. In order to better understand the IV curves, these devices have been simulated using the charge transport model. It was found that shrinking the drain pillar size would significantly help in reaching cut-off at much lower gate bias even at high carrier concentration of unintentionally doped GaN and considerable leakage current caused by the Schottky barrier lowering. The realization of these vertical MESFETs on LED wafers would allow their chip-level integration. This would open a way to many intelligent lighting applications like on-chip current regulator and signal regulation/communication in display technology.",

keywords = "Charge transport model, Commercial LED wafers, LT GaN buffer layer, Schottky barrier lowering, Vertical MESFETs",

author = "Atalla, {Mahmoud R.M.} and {Noor Elahi}, {Asim M.} and Chen Mo and Zhenyu Jiang and Jie Liu and S. Ashok and Jian Xu",

note = "Funding Information: MRMA thanks the Egyptian Ministry of Higher Education for funding his research activities. Prof. J. Xu acknowledges the funding support from NSF CAREER Grant No. 415-37 60D2 . Publisher Copyright: {\textcopyright} 2016 Elsevier Ltd",

year = "2016",

month = dec,

day = "1",

doi = "10.1016/j.sse.2016.09.019",

language = "English (US)",

volume = "126",

pages = "23--31",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd",

}

TY - JOUR

T1 - On the design of GaN vertical MESFETs on commercial LED sapphire wafers

AU - Atalla, Mahmoud R.M.

AU - Noor Elahi, Asim M.

AU - Mo, Chen

AU - Jiang, Zhenyu

AU - Liu, Jie

AU - Ashok, S.

AU - Xu, Jian

N1 - Funding Information: MRMA thanks the Egyptian Ministry of Higher Education for funding his research activities. Prof. J. Xu acknowledges the funding support from NSF CAREER Grant No. 415-37 60D2 . Publisher Copyright: © 2016 Elsevier Ltd

PY - 2016/12/1

Y1 - 2016/12/1

N2 - Design of GaN-based vertical metal-semiconductor field-effect transistors (MESFETs) on commercial light-emitting-diode (LED) epi-wafers has been proposed and proof of principle devices have been fabricated. In order to better understand the IV curves, these devices have been simulated using the charge transport model. It was found that shrinking the drain pillar size would significantly help in reaching cut-off at much lower gate bias even at high carrier concentration of unintentionally doped GaN and considerable leakage current caused by the Schottky barrier lowering. The realization of these vertical MESFETs on LED wafers would allow their chip-level integration. This would open a way to many intelligent lighting applications like on-chip current regulator and signal regulation/communication in display technology.

AB - Design of GaN-based vertical metal-semiconductor field-effect transistors (MESFETs) on commercial light-emitting-diode (LED) epi-wafers has been proposed and proof of principle devices have been fabricated. In order to better understand the IV curves, these devices have been simulated using the charge transport model. It was found that shrinking the drain pillar size would significantly help in reaching cut-off at much lower gate bias even at high carrier concentration of unintentionally doped GaN and considerable leakage current caused by the Schottky barrier lowering. The realization of these vertical MESFETs on LED wafers would allow their chip-level integration. This would open a way to many intelligent lighting applications like on-chip current regulator and signal regulation/communication in display technology.

KW - Charge transport model

KW - Commercial LED wafers

KW - LT GaN buffer layer

KW - Schottky barrier lowering

KW - Vertical MESFETs

UR - http://www.scopus.com/inward/record.url?scp=84991486072&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84991486072&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2016.09.019

DO - 10.1016/j.sse.2016.09.019

M3 - Article

AN - SCOPUS:84991486072

SN - 0038-1101

VL - 126

SP - 23

EP - 31

JO - Solid-State Electronics

JF - Solid-State Electronics

ER -

On the design of GaN vertical MESFETs on commercial LED sapphire wafers

Abstract

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