On scanning electron microscope conduction-mode signals in bulk semiconductor devices: Annular geometry

A. Gopinath, T. De Monts De Savasse

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

Beam-induced signals in the scanning electron microscope provide a means of studying the bulk of semiconductors. This paper develops a two-dimensional theory to predict the spatial distribution of the signal in annular devices and it is shown that geometry and field-dependent contrast can occur. These signals provide a means of studying crystal defects and resistivity variations. Experiments on planar geometry GaAs transferred electron devices support the theoretical predictions.

Original languageEnglish (US)
Article number329
Pages (from-to)2031-2038
Number of pages8
JournalJournal of Physics D: Applied Physics
Volume4
Issue number12
DOIs
StatePublished - Dec 1 1971

Fingerprint Dive into the research topics of 'On scanning electron microscope conduction-mode signals in bulk semiconductor devices: Annular geometry'. Together they form a unique fingerprint.

Cite this