Oligosaccharide/silicon-containing block copolymers with 5 nm features for lithographic applications

Julia D. Cushen, Issei Otsuka, Christopher M. Bates, Sami Halila, Sébastien Fort, Cyrille Rochas, Jeffrey A. Easley, Erica L. Rausch, Anthony Thio, Redouane Borsali, C. Grant Willson, Christopher J. Ellison

Research output: Contribution to journalArticlepeer-review

153 Scopus citations

Abstract

Block copolymers demonstrate potential for use in next-generation lithography due to their ability to self-assemble into well-ordered periodic arrays on the 3-100 nm length scale. The successful lithographic application of block copolymers relies on three critical conditions being met: high Flory-Huggins interaction parameters (χ), which enable formation of <10 nm features, etch selectivity between blocks for facile pattern transfer, and thin film self-assembly control. The present paper describes the synthesis and self-assembly of block copolymers composed of naturally derived oligosaccharides coupled to a silicon-containing polystyrene derivative synthesized by activators regenerated by electron transfer atom transfer radical polymerization. The block copolymers have a large χ and a low degree of polymerization (N) enabling formation of 5 nm feature diameters, incorporate silicon in one block for oxygen reactive ion etch contrast, and exhibit bulk and thin film self-assembly of hexagonally packed cylinders facilitated by a combination of spin coating and solvent annealing techniques. As observed by small angle X-ray scattering and atomic force microscopy, these materials exhibit some of the smallest block copolymer features in the bulk and in thin films reported to date.

Original languageEnglish (US)
Pages (from-to)3424-3433
Number of pages10
JournalACS nano
Volume6
Issue number4
DOIs
StatePublished - Apr 24 2012

Keywords

  • block copolymer
  • lithography
  • nanopatterning
  • oligosaccharide
  • poly(trimethylsilyl styrene)
  • thin films

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