Observation of tunable band gap and two-dimensional subbands in a novel GaAs superlattice

G. H. Döhler, H. K̈nzel, D. Olego, K. Ploog, P. Ruden, H. J. Stolz, G. Abstreiter

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Abstract

Luminescence and Raman measurements on a new type of superlattice consisting of n- and p-type doped GaAs layers grown by molecular-beam epitaxy confirm crucial predictions of theory. A strongly tunable energy gap is found in luminescence. Raman experiments provide the first observation of electronic subbands in purely space-charge-induced quantum wells. A combined analysis of the luminescence and Raman data yields excellent agreement with self-consistent subband calculations based only on the design parameters of the sample.

Original languageEnglish (US)
Pages (from-to)864-867
Number of pages4
JournalPhysical Review Letters
Volume47
Issue number12
DOIs
StatePublished - Jan 1 1981

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luminescence
space charge
molecular beam epitaxy
quantum wells
predictions
electronics

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Döhler, G. H., K̈nzel, H., Olego, D., Ploog, K., Ruden, P., Stolz, H. J., & Abstreiter, G. (1981). Observation of tunable band gap and two-dimensional subbands in a novel GaAs superlattice. Physical Review Letters, 47(12), 864-867. https://doi.org/10.1103/PhysRevLett.47.864

Observation of tunable band gap and two-dimensional subbands in a novel GaAs superlattice. / Döhler, G. H.; K̈nzel, H.; Olego, D.; Ploog, K.; Ruden, P.; Stolz, H. J.; Abstreiter, G.

In: Physical Review Letters, Vol. 47, No. 12, 01.01.1981, p. 864-867.

Research output: Contribution to journalArticle

Döhler, GH, K̈nzel, H, Olego, D, Ploog, K, Ruden, P, Stolz, HJ & Abstreiter, G 1981, 'Observation of tunable band gap and two-dimensional subbands in a novel GaAs superlattice', Physical Review Letters, vol. 47, no. 12, pp. 864-867. https://doi.org/10.1103/PhysRevLett.47.864
Döhler, G. H. ; K̈nzel, H. ; Olego, D. ; Ploog, K. ; Ruden, P. ; Stolz, H. J. ; Abstreiter, G. / Observation of tunable band gap and two-dimensional subbands in a novel GaAs superlattice. In: Physical Review Letters. 1981 ; Vol. 47, No. 12. pp. 864-867.
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