Observation of the Unidirectional Magnetoresistance in Antiferromagnetic Insulator Fe2O3/Pt Bilayers

Yihong Fan, Pengxiang Zhang, Jiahao Han, Yang Lv, Luqiao Liu, Jian Ping Wang

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3 Scopus citations


Unidirectional magnetoresistance (UMR) has been observed in a variety of stacks with ferromagnetic/spin Hall material bilayer structures. In this work, UMR in antiferromagnetic insulator Fe2O3/Pt structure is reported. The UMR has a negative value, which is related to interfacial Rashba coupling and band splitting. Thickness-dependent measurement reveals a potential competition between UMR and the unidirectional spin Hall magnetoresistance (USMR). This work reveals the existence of UMR in antiferromagnetic insulators/heavy metal bilayers and broadens the way for the application of antiferromagnet-based spintronic devices.

Original languageEnglish (US)
Article number2300232
JournalAdvanced Electronic Materials
Issue number8
StatePublished - Aug 2023

Bibliographical note

Funding Information:
This work was supported, in part, by SMART, one of the seven centers of nCORE, a Semiconductor Research Corporation program, sponsored by the National Institute of Standards and Technology (NIST) and by the UMN MRSEC program under Award No. DMR‐2011401. This work utilized the College of Science and Engineering (CSE) Characterization Facility at the University of Minnesota (UMN) supported, in part, by the NSF through the UMN MRSEC program. Portions of this work were conducted in the Minnesota Nano Center, which is supported by the National Science Foundation through the National Nano Coordinated Infrastructure Network (NNCI) under Award Number ECCS‐2025124. P. Z. acknowledges support from Mathworks fellowship. J.‐P.W. also acknowledges support from Robert Hartmann Endowed Chair Professorship. The authors acknowledge Chun‐Tao Chou for the help with XRD measurements.

Publisher Copyright:
© 2023 The Authors. Advanced Electronic Materials published by Wiley-VCH GmbH.


  • antiferromagnetic materials
  • magnetoresistance
  • spin Hall effect
  • spintronics
  • unidirectional magnetoresistance

MRSEC Support

  • Partial


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