Abstract
The transport of electrons in semiconductor heterolayers under the influence of high crossed electric and magnetic fields has been investigated. Particular attention has been paid to real-space transfer effects. For the first time it is shown in a direct fashion that real-space transfer is associated with a transition of the two-dimensional electron gas to a three-dimensional electron distribution. This transition manifests itself by the sudden appearance of magnetoresistance (positive or negative) in perpendicular electric and magnetic fields at a critical electric field strength. Experimental results for various strengths and orientations of the magnetic field are presented and compared with a Monte Carlo transport simulation which included the Lorentz force.
Original language | English (US) |
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Pages (from-to) | 9381-9383 |
Number of pages | 3 |
Journal | Physical Review B |
Volume | 36 |
Issue number | 17 |
DOIs | |
State | Published - 1987 |