Observation of the transition associated with real-space transfer of a two-dimensional electron gas to a three-dimensional electron distribution in semiconductor heterolayers

T. K. Higman, S. J. Manion, I. C. Kizilyalli, M. A. Emanuel, K. Hess, J. J. Coleman

Research output: Contribution to journalArticlepeer-review

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Abstract

The transport of electrons in semiconductor heterolayers under the influence of high crossed electric and magnetic fields has been investigated. Particular attention has been paid to real-space transfer effects. For the first time it is shown in a direct fashion that real-space transfer is associated with a transition of the two-dimensional electron gas to a three-dimensional electron distribution. This transition manifests itself by the sudden appearance of magnetoresistance (positive or negative) in perpendicular electric and magnetic fields at a critical electric field strength. Experimental results for various strengths and orientations of the magnetic field are presented and compared with a Monte Carlo transport simulation which included the Lorentz force.

Original languageEnglish (US)
Pages (from-to)9381-9383
Number of pages3
JournalPhysical Review B
Volume36
Issue number17
DOIs
StatePublished - 1987

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