Observation of precursor control over film stoichiometry during the chemical vapor deposition of amorphous Ti(x)Si(1-x)O2 films

R. C. Smith; C. J. Taylor; J. Roberts; S. A. Campbell; M. Tiner; R. Hegde; C. Hobbs; W. L. Gladfelter

doi:10.1021/cm0003222

Observation of precursor control over film stoichiometry during the chemical vapor deposition of amorphous Ti(x)Si(1-x)O₂ films

R. C. Smith, C. J. Taylor, J. Roberts, S. A. Campbell, M. Tiner, R. Hegde, C. Hobbs, W. L. Gladfelter

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Amorphous thin films of composition Ti(x)Si(1-x)O₂ have been grown by low-pressure vapor deposition on silicon (100) substrates using Si(OEt)₄ and either Ti(O(i)Pr)₄ or anhydrous Ti(NO₃)₄ as the sources of SiO₂ and TiO₂, respectively. RBS revealed that x (from the formula Ti(x)Si(1-x)O₂) was dependent upon the choice of TiO₂ precursor. For films grown using TTIP-TEOX x could be varied by systematic variation of the flow of N₂ through the precursor vessels or the deposition temperature. For the case of TN-TEOS x remained close to 0.5. The results suggested the existence of a specific chemical reaction between TN and TEOS prior to film deposition.

Original language	English (US)
Pages (from-to)	2822-2824
Number of pages	3
Journal	Chemistry of Materials
Volume	12
Issue number	10
DOIs	https://doi.org/10.1021/cm0003222
State	Published - 2000

Publisher link

10.1021/cm0003222

Find It

Find It at U of M Libraries

Cite this

@article{1ef12c5fa75946b6bbfc6d5b3d267c48,

title = "Observation of precursor control over film stoichiometry during the chemical vapor deposition of amorphous Ti(x)Si(1-x)O2 films",

abstract = "Amorphous thin films of composition Ti(x)Si(1-x)O2 have been grown by low-pressure vapor deposition on silicon (100) substrates using Si(OEt)4 and either Ti(O(i)Pr)4 or anhydrous Ti(NO3)4 as the sources of SiO2 and TiO2, respectively. RBS revealed that x (from the formula Ti(x)Si(1-x)O2) was dependent upon the choice of TiO2 precursor. For films grown using TTIP-TEOX x could be varied by systematic variation of the flow of N2 through the precursor vessels or the deposition temperature. For the case of TN-TEOS x remained close to 0.5. The results suggested the existence of a specific chemical reaction between TN and TEOS prior to film deposition.",

author = "Smith, {R. C.} and Taylor, {C. J.} and J. Roberts and Campbell, {S. A.} and M. Tiner and R. Hegde and C. Hobbs and Gladfelter, {W. L.}",

year = "2000",

doi = "10.1021/cm0003222",

language = "English (US)",

volume = "12",

pages = "2822--2824",

journal = "Chemistry of Materials",

issn = "0897-4756",

publisher = "American Chemical Society",

number = "10",

}

TY - JOUR

T1 - Observation of precursor control over film stoichiometry during the chemical vapor deposition of amorphous Ti(x)Si(1-x)O2 films

AU - Smith, R. C.

AU - Taylor, C. J.

AU - Roberts, J.

AU - Campbell, S. A.

AU - Tiner, M.

AU - Hegde, R.

AU - Hobbs, C.

AU - Gladfelter, W. L.

PY - 2000

Y1 - 2000

N2 - Amorphous thin films of composition Ti(x)Si(1-x)O2 have been grown by low-pressure vapor deposition on silicon (100) substrates using Si(OEt)4 and either Ti(O(i)Pr)4 or anhydrous Ti(NO3)4 as the sources of SiO2 and TiO2, respectively. RBS revealed that x (from the formula Ti(x)Si(1-x)O2) was dependent upon the choice of TiO2 precursor. For films grown using TTIP-TEOX x could be varied by systematic variation of the flow of N2 through the precursor vessels or the deposition temperature. For the case of TN-TEOS x remained close to 0.5. The results suggested the existence of a specific chemical reaction between TN and TEOS prior to film deposition.

AB - Amorphous thin films of composition Ti(x)Si(1-x)O2 have been grown by low-pressure vapor deposition on silicon (100) substrates using Si(OEt)4 and either Ti(O(i)Pr)4 or anhydrous Ti(NO3)4 as the sources of SiO2 and TiO2, respectively. RBS revealed that x (from the formula Ti(x)Si(1-x)O2) was dependent upon the choice of TiO2 precursor. For films grown using TTIP-TEOX x could be varied by systematic variation of the flow of N2 through the precursor vessels or the deposition temperature. For the case of TN-TEOS x remained close to 0.5. The results suggested the existence of a specific chemical reaction between TN and TEOS prior to film deposition.

UR - http://www.scopus.com/inward/record.url?scp=0033791444&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033791444&partnerID=8YFLogxK

U2 - 10.1021/cm0003222

DO - 10.1021/cm0003222

M3 - Article

AN - SCOPUS:0033791444

SN - 0897-4756

VL - 12

SP - 2822

EP - 2824

JO - Chemistry of Materials

JF - Chemistry of Materials

IS - 10

ER -

Observation of precursor control over film stoichiometry during the chemical vapor deposition of amorphous Ti(x)Si(1-x)O₂ films

Abstract

Publisher link

Find It

Other files and links

Fingerprint

Cite this