Observation of microwave-induced resistance oscillations in a high-mobility two-dimensional hole gas in a strained Ge/SiGe quantum well

M. A. Zudov, O. A. Mironov, Q. A. Ebner, P. D. Martin, Q. Shi, D. R. Leadley

Research output: Contribution to journalArticle

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Abstract

Microwave-induced resistance oscillations (MIRO) have been extensively studied for more than a decade but, until now, have remained unique to GaAs/AlGaAs-based 2D electron systems. Here, we report on the observation of MIRO in a 2D hole gas hosted in Ge/SiGe quantum well. Our findings confirm that MIRO is a universal phenomenon and demonstrate that microwave photoresistance can be utilized to probe the energy spectrum and the correlation effects of 2D holes in Ge/SiGe quantum wells.

Original languageEnglish (US)
Article number125401
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume89
Issue number12
DOIs
StatePublished - Mar 4 2014

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