Observation of light emission from real-space transfer devices

T. K. Higman, M. S. Hagedorn, Jihong Chen, K. Y. Cheng

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

Light emitters based on real-space transfer devices can be brought about by several mechanisms. The most efficient of these is the injection of minority electrons across a semiconductor heterojunction into a p-type collecting layer. So far, problems associated with the growth of p-type collecting layers have hindered efforts in this area. In this letter we report on light emission caused by the real-space transfer of majority electrons into an n-type collecting layer. We propose a mechanism to account for this light which consists of hole creation by impact ionization of real-space transferred electrons.

Original languageEnglish (US)
Pages (from-to)1342-1344
Number of pages3
JournalApplied Physics Letters
Volume60
Issue number11
DOIs
StatePublished - 1992

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