Numerical study on effects of random dopant fluctuation in double gate tunneling FET

Ying Zhu; Yun Ye; Yu Cao; Jin He; Aixi Zhang; Hongyu He; Hao Wang; Chenyue Ma; Yue Hu; Mansun Chan; Xiaoan Zhu

doi:10.1109/EDSSC.2013.6628040

Numerical study on effects of random dopant fluctuation in double gate tunneling FET

Ying Zhu, Yun Ye, Yu Cao, Jin He, Aixi Zhang, Hongyu He, Hao Wang, Chenyue Ma, Yue Hu, Mansun Chan, Xiaoan Zhu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Scopus citations

Abstract

Impacts of random dopant fluctuations (RDFs) on the performance of an optimized double-gate (DG) tunneling FET (TFET) are studied using 3-D device simulations. The sensitivity of the TFET performance with a high-k gate dielectric to RDF is explored in this paper. Sano's approach is used to generate random doping profiles for statistical device simulation. It is found that TFET suffers from dramatic shift and fluctuations in electrical parameters (Vth, gm and SS for instance) due to RDF, thus emerging a further impact on circuit performance.

Original language	English (US)
Title of host publication	2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
Publisher	IEEE Computer Society
ISBN (Print)	9781467325233
DOIs	https://doi.org/10.1109/EDSSC.2013.6628040
State	Published - Dec 23 2013
Externally published	Yes
Event	2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 - Hong Kong, Hong Kong Duration: Jun 3 2013 → Jun 5 2013

Publication series

Name	2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013

Conference

Conference	2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
Country/Territory	Hong Kong
City	Hong Kong
Period	6/3/13 → 6/5/13

Keywords

double gate (DG)
high-k dielectric
Random Dopant Fluctuation (RDF)
Tunneling FET
variability

Publisher link

10.1109/EDSSC.2013.6628040

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Zhu, Y., Ye, Y., Cao, Y., He, J., Zhang, A., He, H., Wang, H., Ma, C., Hu, Y., Chan, M., & Zhu, X. (2013). Numerical study on effects of random dopant fluctuation in double gate tunneling FET. In 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 Article 6628040 (2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013). IEEE Computer Society. https://doi.org/10.1109/EDSSC.2013.6628040

Numerical study on effects of random dopant fluctuation in double gate tunneling FET. / Zhu, Ying; Ye, Yun; Cao, Yu et al.
2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013. IEEE Computer Society, 2013. 6628040 (2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Zhu, Y, Ye, Y, Cao, Y, He, J, Zhang, A, He, H, Wang, H, Ma, C, Hu, Y, Chan, M & Zhu, X 2013, Numerical study on effects of random dopant fluctuation in double gate tunneling FET. in 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013., 6628040, 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013, IEEE Computer Society, 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013, Hong Kong, Hong Kong, 6/3/13. https://doi.org/10.1109/EDSSC.2013.6628040

Zhu Y, Ye Y, Cao Y, He J, Zhang A, He H et al. Numerical study on effects of random dopant fluctuation in double gate tunneling FET. In 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013. IEEE Computer Society. 2013. 6628040. (2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013). doi: 10.1109/EDSSC.2013.6628040

@inproceedings{51dcb62fdbee4937943f8c93b6d2dc4b,

title = "Numerical study on effects of random dopant fluctuation in double gate tunneling FET",

abstract = "Impacts of random dopant fluctuations (RDFs) on the performance of an optimized double-gate (DG) tunneling FET (TFET) are studied using 3-D device simulations. The sensitivity of the TFET performance with a high-k gate dielectric to RDF is explored in this paper. Sano's approach is used to generate random doping profiles for statistical device simulation. It is found that TFET suffers from dramatic shift and fluctuations in electrical parameters (Vth, gm and SS for instance) due to RDF, thus emerging a further impact on circuit performance.",

keywords = "double gate (DG), high-k dielectric, Random Dopant Fluctuation (RDF), Tunneling FET, variability",

author = "Ying Zhu and Yun Ye and Yu Cao and Jin He and Aixi Zhang and Hongyu He and Hao Wang and Chenyue Ma and Yue Hu and Mansun Chan and Xiaoan Zhu",

year = "2013",

month = dec,

day = "23",

doi = "10.1109/EDSSC.2013.6628040",

language = "English (US)",

isbn = "9781467325233",

series = "2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013",

publisher = "IEEE Computer Society",

booktitle = "2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013",

note = "2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 ; Conference date: 03-06-2013 Through 05-06-2013",

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T1 - Numerical study on effects of random dopant fluctuation in double gate tunneling FET

AU - Zhu, Ying

AU - Ye, Yun

AU - Cao, Yu

AU - He, Jin

AU - Zhang, Aixi

AU - He, Hongyu

AU - Wang, Hao

AU - Ma, Chenyue

AU - Hu, Yue

AU - Chan, Mansun

AU - Zhu, Xiaoan

PY - 2013/12/23

Y1 - 2013/12/23

N2 - Impacts of random dopant fluctuations (RDFs) on the performance of an optimized double-gate (DG) tunneling FET (TFET) are studied using 3-D device simulations. The sensitivity of the TFET performance with a high-k gate dielectric to RDF is explored in this paper. Sano's approach is used to generate random doping profiles for statistical device simulation. It is found that TFET suffers from dramatic shift and fluctuations in electrical parameters (Vth, gm and SS for instance) due to RDF, thus emerging a further impact on circuit performance.

AB - Impacts of random dopant fluctuations (RDFs) on the performance of an optimized double-gate (DG) tunneling FET (TFET) are studied using 3-D device simulations. The sensitivity of the TFET performance with a high-k gate dielectric to RDF is explored in this paper. Sano's approach is used to generate random doping profiles for statistical device simulation. It is found that TFET suffers from dramatic shift and fluctuations in electrical parameters (Vth, gm and SS for instance) due to RDF, thus emerging a further impact on circuit performance.

KW - double gate (DG)

KW - high-k dielectric

KW - Random Dopant Fluctuation (RDF)

KW - Tunneling FET

KW - variability

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U2 - 10.1109/EDSSC.2013.6628040

DO - 10.1109/EDSSC.2013.6628040

M3 - Conference contribution

AN - SCOPUS:84890519956

SN - 9781467325233

T3 - 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013

BT - 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013

PB - IEEE Computer Society

T2 - 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013

Y2 - 3 June 2013 through 5 June 2013

ER -

Numerical study on effects of random dopant fluctuation in double gate tunneling FET

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