This paper presents a two-dimensional (2D) transient numerical model for simulating the vapor deposition process for growing perovskite films. The diffusion process of methylammonium iodide (MAI) vapor through the processing chamber to react with the lead iodide (PbI2) substrate and grow the perovskite layer is analyzed with a diffusion coefficient that has been determined by measuring thicknesses of perovskite layers grown in a chemical vapor deposition (CVD) chamber. Innovations applied to the CVD chamber to improve the uniformity of layer thickness and offer control over the growth process are applied and computationally assessed. One is the addition of screens at various strategic locations in the chamber to improve flow uniformity. Another is changing the locations of MAI sublimation bowls and chamber outlet numbers and locations. The results show that adding screens makes the MAI vapor flow more uniform in the plenum while allowing a quicker purge of the N2 inert gas. This leads to a higher and more uniform growth rate of perovskite. The MAI vapor flow is influenced by the reaction plenum geometry, so the chamber is expected to allow good control of the process to achieve uniform surface deposition rate and controlled grain growth of the perovskite layer.
|Original language||English (US)|
|Journal||Journal of Solar Energy Engineering, Transactions of the ASME|
|State||Published - Feb 2021|
Bibliographical noteFunding Information:
A portion of this work was supported by the China Scholarship Council (CSC). The numerical part of this work was carried out using computing resources at the University of Minnesota Supercomputing Institute.
Copyright © 2021 by ASME.
- Chemical vapor deposition
- Perovskite layer growth
- Perovskite solar cells
- Surface deposition rate
- Transient numerical simulation