Abstract
Applications of metal halide perovskite have been rapidly developing in recent years. However, very little research focusing on basic growth kinetics of perovskite films can be found in the literature. This paper discusses a hybrid physical-chemical deposition process of planar perovskite films. A 2-D ANSYS Fluent simulation is presented to calculate the heat and mass transfer during the deposition process. An optimized mass flow configuration with a flow resistance imposed by a porous screen is shown to give a uniform distribution of the methylammonium iodide vapor precursor and an even surface deposition rate of perovskite films. Both steady and transient calculations indicate that increasing operating temperature or vessel pressure within certain limits can boost the surface deposition rate of perovskite. Limitations on working pressure are presented for preventing reverse flow into the chamber and associated deterioration of deposition uniformity of the perovskite films.
Original language | English (US) |
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Article number | 144903 |
Journal | Journal of Applied Physics |
Volume | 121 |
Issue number | 14 |
DOIs | |
State | Published - Apr 14 2017 |
Bibliographical note
Funding Information:This work was partially supported by the China Scholarship Council. It was performed in part using computational resources at the Minnesota Supercomputing Institute.
Publisher Copyright:
© 2017 Author(s).