Novel voltage step stress (VSS) technique for fast lifetime prediction of hot carrier degradation

Xixiang Feng; Pengpeng Ren; Zhigang Ji; Runsheng Wang; Ketul B. Sutaria; Yu Cao; Ru Huang

doi:10.1109/ICSICT.2014.7021226

Novel voltage step stress (VSS) technique for fast lifetime prediction of hot carrier degradation

Xixiang Feng, Pengpeng Ren, Zhigang Ji, Runsheng Wang, Ketul B. Sutaria, Yu Cao, Ru Huang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

Hot carrier injection (HCI) is one of the critical de-vice degradation mechanisms, and is conventionally characterized with constant voltage stress (CVS) method. A novel voltage-step stress (VSS) methodology is pro-posed to quickly characterize HCI degradation, based on a simplified reaction-diffusion model. This wafer-level reliability qualification methodology for HCI requires only one single device, and the total test time can be con-trolled within 2 hours. Therefore, this new technique can be an effective tool for fast reliability screening for HCI during process development in the future.

Original language	English (US)
Title of host publication	Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
Editors	Jia Zhou, Ting-Ao Tang
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479932962
DOIs	https://doi.org/10.1109/ICSICT.2014.7021226
State	Published - Jan 23 2014
Externally published	Yes
Event	2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 - Guilin, China Duration: Oct 28 2014 → Oct 31 2014

Publication series

Name	Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014

Conference

Conference	2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
Country/Territory	China
City	Guilin
Period	10/28/14 → 10/31/14

Bibliographical note

Publisher Copyright:
© 2014 IEEE.

Publisher link

10.1109/ICSICT.2014.7021226

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Feng, X., Ren, P., Ji, Z., Wang, R., Sutaria, K. B., Cao, Y., & Huang, R. (2014). Novel voltage step stress (VSS) technique for fast lifetime prediction of hot carrier degradation. In J. Zhou, & T.-A. Tang (Eds.), Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 Article 7021226 (Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICSICT.2014.7021226

Novel voltage step stress (VSS) technique for fast lifetime prediction of hot carrier degradation. / Feng, Xixiang; Ren, Pengpeng; Ji, Zhigang et al.
Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014. ed. / Jia Zhou; Ting-Ao Tang. Institute of Electrical and Electronics Engineers Inc., 2014. 7021226 (Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Feng, X, Ren, P, Ji, Z, Wang, R, Sutaria, KB, Cao, Y & Huang, R 2014, Novel voltage step stress (VSS) technique for fast lifetime prediction of hot carrier degradation. in J Zhou & T-A Tang (eds), Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014., 7021226, Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014, Institute of Electrical and Electronics Engineers Inc., 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014, Guilin, China, 10/28/14. https://doi.org/10.1109/ICSICT.2014.7021226

Feng X, Ren P, Ji Z, Wang R, Sutaria KB, Cao Y et al. Novel voltage step stress (VSS) technique for fast lifetime prediction of hot carrier degradation. In Zhou J, Tang TA, editors, Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014. Institute of Electrical and Electronics Engineers Inc. 2014. 7021226. (Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014). doi: 10.1109/ICSICT.2014.7021226

Feng, Xixiang ; Ren, Pengpeng ; Ji, Zhigang et al. / Novel voltage step stress (VSS) technique for fast lifetime prediction of hot carrier degradation. Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014. editor / Jia Zhou ; Ting-Ao Tang. Institute of Electrical and Electronics Engineers Inc., 2014. (Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014).

@inproceedings{fb937f58704b4d1c8b9c0ea72d5d3196,

title = "Novel voltage step stress (VSS) technique for fast lifetime prediction of hot carrier degradation",

abstract = "Hot carrier injection (HCI) is one of the critical de-vice degradation mechanisms, and is conventionally characterized with constant voltage stress (CVS) method. A novel voltage-step stress (VSS) methodology is pro-posed to quickly characterize HCI degradation, based on a simplified reaction-diffusion model. This wafer-level reliability qualification methodology for HCI requires only one single device, and the total test time can be con-trolled within 2 hours. Therefore, this new technique can be an effective tool for fast reliability screening for HCI during process development in the future.",

author = "Xixiang Feng and Pengpeng Ren and Zhigang Ji and Runsheng Wang and Sutaria, {Ketul B.} and Yu Cao and Ru Huang",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 ; Conference date: 28-10-2014 Through 31-10-2014",

year = "2014",

month = jan,

day = "23",

doi = "10.1109/ICSICT.2014.7021226",

language = "English (US)",

series = "Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

editor = "Jia Zhou and Ting-Ao Tang",

booktitle = "Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014",

}

TY - GEN

T1 - Novel voltage step stress (VSS) technique for fast lifetime prediction of hot carrier degradation

AU - Feng, Xixiang

AU - Ren, Pengpeng

AU - Ji, Zhigang

AU - Wang, Runsheng

AU - Sutaria, Ketul B.

AU - Cao, Yu

AU - Huang, Ru

PY - 2014/1/23

Y1 - 2014/1/23

N2 - Hot carrier injection (HCI) is one of the critical de-vice degradation mechanisms, and is conventionally characterized with constant voltage stress (CVS) method. A novel voltage-step stress (VSS) methodology is pro-posed to quickly characterize HCI degradation, based on a simplified reaction-diffusion model. This wafer-level reliability qualification methodology for HCI requires only one single device, and the total test time can be con-trolled within 2 hours. Therefore, this new technique can be an effective tool for fast reliability screening for HCI during process development in the future.

AB - Hot carrier injection (HCI) is one of the critical de-vice degradation mechanisms, and is conventionally characterized with constant voltage stress (CVS) method. A novel voltage-step stress (VSS) methodology is pro-posed to quickly characterize HCI degradation, based on a simplified reaction-diffusion model. This wafer-level reliability qualification methodology for HCI requires only one single device, and the total test time can be con-trolled within 2 hours. Therefore, this new technique can be an effective tool for fast reliability screening for HCI during process development in the future.

UR - http://www.scopus.com/inward/record.url?scp=84946691312&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84946691312&partnerID=8YFLogxK

U2 - 10.1109/ICSICT.2014.7021226

DO - 10.1109/ICSICT.2014.7021226

M3 - Conference contribution

AN - SCOPUS:84946691312

T3 - Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014

BT - Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014

A2 - Zhou, Jia

A2 - Tang, Ting-Ao

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014

Y2 - 28 October 2014 through 31 October 2014

ER -

Novel voltage step stress (VSS) technique for fast lifetime prediction of hot carrier degradation

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