Novel three-terminal negative differential conductance device in silicon: The hot-electron phonon-emission field-effect transistor

S. J. Koester, K. Ismail, K. Y. Lee, J. O. Chu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The operation of a three-terminal, laterally-patterned negative differential conductance (NDC) device, a hot-electron phonon-emission field-effect transistor (HEPEFET), fabricated in a high-mobility strained Si quantum well is presented. The HEPEFET device design consists of an etch-defined point contact or wire geometry. Bistable switching behavior is observed in both voltage- and current-controlled modes of operation. The ballistic nature of the electron transport makes the device potentially attractive for high-speed, low power circuit applications.

Original languageEnglish (US)
Title of host publicationAnnual Device Research Conference Digest
PublisherIEEE
Pages86-87
Number of pages2
StatePublished - Jan 1 1997
EventProceedings of the 1997 55th Annual Device Research Conference - Fort Collins, CO, USA
Duration: Jun 23 1997Jun 25 1997

Other

OtherProceedings of the 1997 55th Annual Device Research Conference
CityFort Collins, CO, USA
Period6/23/976/25/97

Fingerprint Dive into the research topics of 'Novel three-terminal negative differential conductance device in silicon: The hot-electron phonon-emission field-effect transistor'. Together they form a unique fingerprint.

Cite this