Nonuniformities in GaN/AlN quantum wells

K. A. Mkhoyan, J. Silcox, H. Wu, W. J. Schaff, L. F. Eastman

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


A study was performed on the nonuniformities in GaN/AlN quantum wells. The composition sensitive annular dark field imaging and electron energy-loss spectroscopy were used to determine long-range uniformities of GaN quantum wells. The results indicated that the interfaces between the quantum wells and the barriers are in most cases almost atomically sharp.

Original languageEnglish (US)
Pages (from-to)2668-2670
Number of pages3
JournalApplied Physics Letters
Issue number13
StatePublished - Sep 29 2003


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