Nonuniformities in GaN/AlN quantum wells

K. A. Mkhoyan; J. Silcox; H. Wu; W. J. Schaff; L. F. Eastman

doi:10.1063/1.1614439

Nonuniformities in GaN/AlN quantum wells

K. A. Mkhoyan, J. Silcox, H. Wu, W. J. Schaff, L. F. Eastman

Chemical Engineering and Materials Science

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6 Scopus citations

Abstract

A study was performed on the nonuniformities in GaN/AlN quantum wells. The composition sensitive annular dark field imaging and electron energy-loss spectroscopy were used to determine long-range uniformities of GaN quantum wells. The results indicated that the interfaces between the quantum wells and the barriers are in most cases almost atomically sharp.

Original language	English (US)
Pages (from-to)	2668-2670
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	13
DOIs	https://doi.org/10.1063/1.1614439
State	Published - Sep 29 2003

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10.1063/1.1614439

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title = "Nonuniformities in GaN/AlN quantum wells",

abstract = "A study was performed on the nonuniformities in GaN/AlN quantum wells. The composition sensitive annular dark field imaging and electron energy-loss spectroscopy were used to determine long-range uniformities of GaN quantum wells. The results indicated that the interfaces between the quantum wells and the barriers are in most cases almost atomically sharp.",

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AU - Silcox, J.

AU - Wu, H.

AU - Schaff, W. J.

AU - Eastman, L. F.

PY - 2003/9/29

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AB - A study was performed on the nonuniformities in GaN/AlN quantum wells. The composition sensitive annular dark field imaging and electron energy-loss spectroscopy were used to determine long-range uniformities of GaN quantum wells. The results indicated that the interfaces between the quantum wells and the barriers are in most cases almost atomically sharp.

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Nonuniformities in GaN/AlN quantum wells

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