Nonthermal transition of GaAs in ultra-intense laser radiation field

Traian Dumitrica, Roland E. Allen

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


Using the technique of fight-binding electron-ion dynamics, we have calculated the response of crystalline GaAs when a femtosecond laser pulse excites 1-20% of the valence electrons. Above a threshold fluence, which corresponds to promotion of about 12% of the valence electrons to the conduction band, the lattice is destabilized and the band gap collapses to zero. This result supports the conclusion that structural changes on a subpicosecond time scale observed in pump-probe experiments are of a nonthermal nature.

Original languageEnglish (US)
Pages (from-to)237-242
Number of pages6
JournalLaser and Particle Beams
Issue number2
StatePublished - 2002


  • Laser
  • Phase transition
  • Semiconductors
  • Ultrafast


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