Nonlinear DC equivalent circuits for ferroelectric memristor and Its FSM application

P. Michael Preetam Raj, Amlan Ranjan Kalita, Mantu K. Hudait, Shashank Priya, Souvik Kundu

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


Pt/BaTiO 3 -BiFeO 3 /Nb:SrTiO 3 based memristors were fabricated and their current–voltage (I–V) characteristics were studied in order to facilitate integration with analog/digital computations. Piecewise non-linear I–V characteristic equations of the ferroelectric memristor were obtained using non-linear regression techniques. An equivalent circuit for the fabricated memristors was obtained comprising of internal current, film resistance, and voltage dependent resistance. Utilizing the equivalent circuit model, a three bit general purpose Finite State Machine was developed and simulated results were found to match with the fabricated FSM device results.

Original languageEnglish (US)
Pages (from-to)16-27
Number of pages12
JournalIntegrated Ferroelectrics
Issue number1
StatePublished - Sep 2 2018
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2018, © 2018 Taylor & Francis Group, LLC.


  • Band alignment
  • finite state machine
  • polarization inversion
  • resistive switching


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