TY - JOUR
T1 - Nonlinear 1/f noise in amorphous silicon
AU - Parman, C.
AU - Kakalios, J.
PY - 1991
Y1 - 1991
N2 - Measurements of coplanar current fluctuations in n-type hydrogenated amorphous silicon (a-Si:H) find that the spectral density of the noise accurately obeys a 1/f frequency dependence for frequency f in the range 1, 103 Hz over a temperature range 300T, 450 K. The noise power density displays a power-law dependence on the dc current, where the power-law exponent b increases with temperature from b1 at 350 K to 2.5 at 450 K. These results are discussed in terms of models for noise in composite and inhomogeneous materials.
AB - Measurements of coplanar current fluctuations in n-type hydrogenated amorphous silicon (a-Si:H) find that the spectral density of the noise accurately obeys a 1/f frequency dependence for frequency f in the range 1, 103 Hz over a temperature range 300T, 450 K. The noise power density displays a power-law dependence on the dc current, where the power-law exponent b increases with temperature from b1 at 350 K to 2.5 at 450 K. These results are discussed in terms of models for noise in composite and inhomogeneous materials.
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U2 - 10.1103/PhysRevLett.67.2529
DO - 10.1103/PhysRevLett.67.2529
M3 - Article
C2 - 10044449
AN - SCOPUS:0000478641
SN - 0031-9007
VL - 67
SP - 2529
EP - 2532
JO - Physical review letters
JF - Physical review letters
IS - 18
ER -