Non-thermionic cathodes - solid state electron emitters based on GaN and LaB6

A. I. Akinwande; R. D. Horning; P. P. Ruden; D. K. Arch; B. R. Johnson; B. G. Heil; J. M. King

Non-thermionic cathodes - solid state electron emitters based on GaN and LaB₆

A. I. Akinwande
, R. D. Horning
, P. P. Ruden
, D. K. Arch
, B. R. Johnson
, B. G. Heil
, J. M. King

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

We report the first experimental demonstration of a GaN cold cathode emitter that uses bandgap engineering to achieve low-voltage, room-temperature and durable emission from a flat surface. The device consists of a GaN pn junction and a thin layer of LaB₆. The device achieves effective negative electron affinity by injecting electrons from the conduction band of a p-type wide handgap semiconductor into vacuum through an intermediary low workfunction material.

Original language	English (US)
Pages (from-to)	729-732
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
State	Published - Dec 1 1997
Event	1997 International Electron Devices Meeting - Washington, DC, USA Duration: Dec 7 1997 → Dec 10 1997

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@article{57824d4f9c9546a29401339730dffa00,

title = "Non-thermionic cathodes - solid state electron emitters based on GaN and LaB6",

abstract = "We report the first experimental demonstration of a GaN cold cathode emitter that uses bandgap engineering to achieve low-voltage, room-temperature and durable emission from a flat surface. The device consists of a GaN pn junction and a thin layer of LaB6. The device achieves effective negative electron affinity by injecting electrons from the conduction band of a p-type wide handgap semiconductor into vacuum through an intermediary low workfunction material.",

author = "Akinwande, \{A. I.\} and Horning, \{R. D.\} and Ruden, \{P. P.\} and Arch, \{D. K.\} and Johnson, \{B. R.\} and Heil, \{B. G.\} and King, \{J. M.\}",

year = "1997",

month = dec,

day = "1",

language = "English (US)",

pages = "729--732",

journal = "Technical Digest - International Electron Devices Meeting, IEDM",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "1997 International Electron Devices Meeting ; Conference date: 07-12-1997 Through 10-12-1997",

}

TY - JOUR

T1 - Non-thermionic cathodes - solid state electron emitters based on GaN and LaB6

AU - Akinwande, A. I.

AU - Horning, R. D.

AU - Ruden, P. P.

AU - Arch, D. K.

AU - Johnson, B. R.

AU - Heil, B. G.

AU - King, J. M.

PY - 1997/12/1

Y1 - 1997/12/1

N2 - We report the first experimental demonstration of a GaN cold cathode emitter that uses bandgap engineering to achieve low-voltage, room-temperature and durable emission from a flat surface. The device consists of a GaN pn junction and a thin layer of LaB6. The device achieves effective negative electron affinity by injecting electrons from the conduction band of a p-type wide handgap semiconductor into vacuum through an intermediary low workfunction material.

AB - We report the first experimental demonstration of a GaN cold cathode emitter that uses bandgap engineering to achieve low-voltage, room-temperature and durable emission from a flat surface. The device consists of a GaN pn junction and a thin layer of LaB6. The device achieves effective negative electron affinity by injecting electrons from the conduction band of a p-type wide handgap semiconductor into vacuum through an intermediary low workfunction material.

UR - https://www.scopus.com/pages/publications/84886448040

UR - https://www.scopus.com/pages/publications/84886448040#tab=citedBy

M3 - Conference article

AN - SCOPUS:84886448040

SN - 0163-1918

SP - 729

EP - 732

JO - Technical Digest - International Electron Devices Meeting, IEDM

JF - Technical Digest - International Electron Devices Meeting, IEDM

T2 - 1997 International Electron Devices Meeting

Y2 - 7 December 1997 through 10 December 1997

ER -

Non-thermionic cathodes - solid state electron emitters based on GaN and LaB₆

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