Non-thermionic cathodes - solid state electron emitters based on GaN and LaB6

A. I. Akinwande, R. D. Horning, P. P. Ruden, D. K. Arch, B. R. Johnson, B. G. Heil, J. M. King

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations


We report the first experimental demonstration of a GaN cold cathode emitter that uses bandgap engineering to achieve low-voltage, room-temperature and durable emission from a flat surface. The device consists of a GaN pn junction and a thin layer of LaB6. The device achieves effective negative electron affinity by injecting electrons from the conduction band of a p-type wide handgap semiconductor into vacuum through an intermediary low workfunction material.

Original languageEnglish (US)
Pages (from-to)729-732
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting, IEDM
StatePublished - Dec 1 1997
Event1997 International Electron Devices Meeting - Washington, DC, USA
Duration: Dec 7 1997Dec 10 1997


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