We report the first experimental demonstration of a GaN cold cathode emitter that uses bandgap engineering to achieve low-voltage, room-temperature and durable emission from a flat surface. The device consists of a GaN pn junction and a thin layer of LaB6. The device achieves effective negative electron affinity by injecting electrons from the conduction band of a p-type wide handgap semiconductor into vacuum through an intermediary low workfunction material.
|Original language||English (US)|
|Number of pages||4|
|Journal||Technical Digest - International Electron Devices Meeting, IEDM|
|State||Published - Dec 1 1997|
|Event||1997 International Electron Devices Meeting - Washington, DC, USA|
Duration: Dec 7 1997 → Dec 10 1997