Non-stoichiometric alox films prepared by chemical vapor deposition using dimethylaluminum isopropoxide as single precursor and their non-volatile memory characteristics

Sun Sook Lee, Eun Seok Lee, Seok Hwan Kim, Byung Kook Lee, Seok Jong Jeong, Jin Ha Hwang, Chang Gyoun Kim, Taek Mo Chung, Ki Seok An

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

Dimethylaluminum isopropoxide (DMAI, (CH3)2AlOiPr) as a single precursor, which contains one aluminum and one oxygen atom, has been adopted to deposit non-stoichiometric aluminum oxide (AlOx) films by low pressure metal organic chemical vapor deposition without an additional oxygen source. The atomic concentration of Al and O in the deposited AlOx film was measured to be Al:O = ∼1:1.1 and any serious interfacial oxide layer between the film and Si substrate was not observed. Gaseous by-products monitored by quadruple mass spectrometry show that β-hydrogen elimination mechanism is mainly contributed to the AlOx CVD process of DMAI precursor. The current-voltage characteristics of the AlOx film in Au/AlOx/Ir metalinsulator- metal (MIM) capacitor structure show high ON/OFF ratio larger than ∼106 with SET and RESET voltages of 2.7 and 0.8 V, respectively. Impedance spectra indicate that the switching and memory phenomena are based on the bulk-based origins, presumably the formation and rupture of filaments.

Original languageEnglish (US)
Pages (from-to)2207-2212
Number of pages6
JournalBulletin of the Korean Chemical Society
Volume33
Issue number7
DOIs
StatePublished - Jul 20 2012

Keywords

  • Dimethylaluminum isopropoxide (DMAI)
  • Non-stoichiometric AlOx
  • Non-volatile memory
  • Single precursor
  • β- Hydrogen elimination

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