Non-charge-sheet analytic model for ideal retrograde doping MOSFETs

This paper presents a physics-based non-charge-sheet analytic model for an ideal retrograde doping MOSFET structure. The model adopts an approach of solving Poisson's equation to the heavilydoped region and lightly-doped region, respectively, and ultimately obtains the analytic expression of potential distribution and the drain current of the retrograde doping MOSFET. This paper compares the analytical model with numerical simulation results, which demonstrates that the current analytic model is applicable to both the weak and strong inversion situations and also to different geometry conditions. In this case, this model provides a foundation to develop a complete retrograde doping MOSFET model involved with advanced physical effects, such as short-channel effect, quantum mechanic effect.