Non-charge-sheet analytic model for ideal retrograde doping MOSFETs

Jin He, Zhize Zhou, Cao Yu, Lin He, Yun Ye, Mansun Chan

Research output: Contribution to journalArticlepeer-review


This paper presents a physics-based non-charge-sheet analytic model for an ideal retrograde doping MOSFET structure. The model adopts an approach of solving Poisson's equation to the heavilydoped region and lightly-doped region, respectively, and ultimately obtains the analytic expression of potential distribution and the drain current of the retrograde doping MOSFET. This paper compares the analytical model with numerical simulation results, which demonstrates that the current analytic model is applicable to both the weak and strong inversion situations and also to different geometry conditions. In this case, this model provides a foundation to develop a complete retrograde doping MOSFET model involved with advanced physical effects, such as short-channel effect, quantum mechanic effect.

Original languageEnglish (US)
Pages (from-to)232-239
Number of pages8
JournalJournal of Computational and Theoretical Nanoscience
Issue number1
StatePublished - Jan 2013
Externally publishedYes


  • Compact modeling
  • Integrated circuit
  • MOSFET device
  • Short-channel effect


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