Non-Arrhenius anomalous hopping electronic transport in hydrogenated amorphous silicon and composite amorphous/nanocrystalline thin films

K. Bodurtha, James Kakalios

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2 Scopus citations

Abstract

The temperature dependence of the dark conductivity of hydrogenated amorphous silicon (a-Si:H) thin films and a-Si:H films containing germanium or silicon nanocrystalline inclusions are examined. Analysis using the reduced activation energy provides clear evidence that conduction is non-Arrhenius, and is more accurately described by an anomalous hopping expression σ (T) = σ 1 exp [- (T 0 / T) κ] where the exponent is κ ∼ 0.75 ± 0.05. This observed temperature dependence is discussed in terms of alternative models for electronic transport in amorphous semiconductors.

Original languageEnglish (US)
Article number215103
JournalJournal of Applied Physics
Volume118
Issue number21
DOIs
StatePublished - Dec 7 2015

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