Next generation promising Cu2(ZnxFe1-x)SnS4 photovoltaic absorber material prepared by pulsed laser deposition technique

G. L. Agawane; S. W. Shin; S. A. Vanalakar; A. V. Moholkar; J. H. Kim

doi:10.1016/j.matlet.2014.08.118

Next generation promising Cu₂(Zn_xFe_1-x)SnS₄ photovoltaic absorber material prepared by pulsed laser deposition technique

G. L. Agawane, S. W. Shin, S. A. Vanalakar, A. V. Moholkar, J. H. Kim

Chemical Engineering and Materials Science

Research output: Contribution to journal › Article › peer-review

54 Scopus citations

Abstract

In this study, pioneering work has been carried out for the preparation of Cu₂(Zn_xFe_1-x)SnS₄ (CZFTS) thin films by the pulsed laser deposition technique. The effects of changing the Zn/Fe ratio of the targets on the properties of CZFTS thin films were investigated. Field emission scanning electron microscopy studies revealed that all CZFTS thin films exhibited highly compact, smooth, and homogeneous surfaces. X-ray diffraction and Raman studies on CZFTS thin films showed the transformation of the kesterite to stannite phase with variation of Zn/Fe ratio. High resolution transmission electron microscope image for CFTS film showed d-spacing of 0.32 nm consistent with the (112) plane. The direct optical band gap for CZFTS thin films was found to be in the range of 1.33-1.74eV.

Original language	English (US)
Pages (from-to)	147-149
Number of pages	3
Journal	Materials Letters
Volume	137
DOIs	https://doi.org/10.1016/j.matlet.2014.08.118
State	Published - Dec 15 2014

Bibliographical note

Publisher Copyright:
© 2014 Elsevier B.V.

Keywords

CZFTS thin films
Chalcogens
PLD
Solar cells
Zn/Fe ratio

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.matlet.2014.08.118

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title = "Next generation promising Cu2(ZnxFe1-x)SnS4 photovoltaic absorber material prepared by pulsed laser deposition technique",

abstract = "In this study, pioneering work has been carried out for the preparation of Cu2(ZnxFe1-x)SnS4 (CZFTS) thin films by the pulsed laser deposition technique. The effects of changing the Zn/Fe ratio of the targets on the properties of CZFTS thin films were investigated. Field emission scanning electron microscopy studies revealed that all CZFTS thin films exhibited highly compact, smooth, and homogeneous surfaces. X-ray diffraction and Raman studies on CZFTS thin films showed the transformation of the kesterite to stannite phase with variation of Zn/Fe ratio. High resolution transmission electron microscope image for CFTS film showed d-spacing of 0.32 nm consistent with the (112) plane. The direct optical band gap for CZFTS thin films was found to be in the range of 1.33-1.74eV.",

keywords = "CZFTS thin films, Chalcogens, PLD, Solar cells, Zn/Fe ratio",

author = "Agawane, {G. L.} and Shin, {S. W.} and Vanalakar, {S. A.} and Moholkar, {A. V.} and Kim, {J. H.}",

note = "Publisher Copyright: {\textcopyright} 2014 Elsevier B.V.",

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AU - Agawane, G. L.

AU - Shin, S. W.

AU - Vanalakar, S. A.

AU - Moholkar, A. V.

AU - Kim, J. H.

PY - 2014/12/15

Y1 - 2014/12/15

N2 - In this study, pioneering work has been carried out for the preparation of Cu2(ZnxFe1-x)SnS4 (CZFTS) thin films by the pulsed laser deposition technique. The effects of changing the Zn/Fe ratio of the targets on the properties of CZFTS thin films were investigated. Field emission scanning electron microscopy studies revealed that all CZFTS thin films exhibited highly compact, smooth, and homogeneous surfaces. X-ray diffraction and Raman studies on CZFTS thin films showed the transformation of the kesterite to stannite phase with variation of Zn/Fe ratio. High resolution transmission electron microscope image for CFTS film showed d-spacing of 0.32 nm consistent with the (112) plane. The direct optical band gap for CZFTS thin films was found to be in the range of 1.33-1.74eV.

AB - In this study, pioneering work has been carried out for the preparation of Cu2(ZnxFe1-x)SnS4 (CZFTS) thin films by the pulsed laser deposition technique. The effects of changing the Zn/Fe ratio of the targets on the properties of CZFTS thin films were investigated. Field emission scanning electron microscopy studies revealed that all CZFTS thin films exhibited highly compact, smooth, and homogeneous surfaces. X-ray diffraction and Raman studies on CZFTS thin films showed the transformation of the kesterite to stannite phase with variation of Zn/Fe ratio. High resolution transmission electron microscope image for CFTS film showed d-spacing of 0.32 nm consistent with the (112) plane. The direct optical band gap for CZFTS thin films was found to be in the range of 1.33-1.74eV.

KW - CZFTS thin films

KW - Chalcogens

KW - PLD

KW - Solar cells

KW - Zn/Fe ratio

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