Next generation promising Cu2(ZnxFe1-x)SnS4 photovoltaic absorber material prepared by pulsed laser deposition technique

G. L. Agawane, S. W. Shin, S. A. Vanalakar, A. V. Moholkar, J. H. Kim

Research output: Contribution to journalArticlepeer-review

44 Scopus citations

Abstract

In this study, pioneering work has been carried out for the preparation of Cu2(ZnxFe1-x)SnS4 (CZFTS) thin films by the pulsed laser deposition technique. The effects of changing the Zn/Fe ratio of the targets on the properties of CZFTS thin films were investigated. Field emission scanning electron microscopy studies revealed that all CZFTS thin films exhibited highly compact, smooth, and homogeneous surfaces. X-ray diffraction and Raman studies on CZFTS thin films showed the transformation of the kesterite to stannite phase with variation of Zn/Fe ratio. High resolution transmission electron microscope image for CFTS film showed d-spacing of 0.32 nm consistent with the (112) plane. The direct optical band gap for CZFTS thin films was found to be in the range of 1.33-1.74eV.

Original languageEnglish (US)
Pages (from-to)147-149
Number of pages3
JournalMaterials Letters
Volume137
DOIs
StatePublished - Dec 15 2014

Bibliographical note

Funding Information:
This work was supported by the Human Resources Development program (No. 20124010203180 ) of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korea government Ministry of Trade, Industry and Energy . This work was supported partially by Chonnam National University, 2013.

Publisher Copyright:
© 2014 Elsevier B.V.

Keywords

  • CZFTS thin films
  • Chalcogens
  • PLD
  • Solar cells
  • Zn/Fe ratio

Fingerprint

Dive into the research topics of 'Next generation promising Cu2(ZnxFe1-x)SnS4 photovoltaic absorber material prepared by pulsed laser deposition technique'. Together they form a unique fingerprint.

Cite this