New ultrafast switching mechanism in semiconductor heterostructures

K. Hess, T. K. Higman, M. A. Emanuel, J. J. Coleman

Research output: Contribution to journalArticlepeer-review

74 Scopus citations

Abstract

A new switching mechanism in a two-terminal semiconductor heterolayer structure is proposed which capitalizes on nonlinear electron temperature effects in adjacent heterolayers. The estimated switching speed of an optimized heterostructure hot electron diode should be extremely fast, perhaps as fast as 200 fs. Data are presented on prototype devices which show the expected negative differential resistance and indicate that the basic physical model is correct.

Original languageEnglish (US)
Pages (from-to)3775-3777
Number of pages3
JournalJournal of Applied Physics
Volume60
Issue number10
DOIs
StatePublished - Dec 1 1986

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