TY - JOUR
T1 - New paradigm of predictive MOSFET and interconnect modeling for early circuit simulation
AU - Cao, Yu
AU - Sato, Takashi
AU - Orshansky, Michael
AU - Sylvester, Dennis
AU - Hu, Chenming
PY - 2000
Y1 - 2000
N2 - A new paradigm of predictive MOSFET and interconnect modeling is introduced. This approach is developed to specifically address SPICE compatible parameters for future technology generations. For a given technology node, designers can use default values or directly input Leff, Tox, Vt, Rdsw and interconnect dimensions to instantly obtain a BSIM3v3 customized model for early stages of circuit design and research. Models for 0.18μm and 0.13μm technology nodes with Leff down to 70nm are currently available on the web. Comparisons with published data and 2D simulations are used to verify this predictive technology model.
AB - A new paradigm of predictive MOSFET and interconnect modeling is introduced. This approach is developed to specifically address SPICE compatible parameters for future technology generations. For a given technology node, designers can use default values or directly input Leff, Tox, Vt, Rdsw and interconnect dimensions to instantly obtain a BSIM3v3 customized model for early stages of circuit design and research. Models for 0.18μm and 0.13μm technology nodes with Leff down to 70nm are currently available on the web. Comparisons with published data and 2D simulations are used to verify this predictive technology model.
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M3 - Conference article
AN - SCOPUS:0033712799
SN - 0886-5930
SP - 201
EP - 204
JO - Proceedings of the Custom Integrated Circuits Conference
JF - Proceedings of the Custom Integrated Circuits Conference
T2 - CICC 2000: 22nd Annual Custom Integrated Circuits Conference
Y2 - 21 May 2000 through 24 May 2000
ER -