New low-voltage circuits for XOR and XNOR

Hanho Lee; Gerald E Sobelman

New low-voltage circuits for XOR and XNOR

Hanho Lee, Gerald E Sobelman

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

23 Scopus citations

Abstract

New methods are proposed to implement the exclusive-OR and exclusive-NOR functions at the transistor level under low supply voltage. Since the dynamic power dissipation in CMOS is proportional to V_dd², low-voltage operation of the circuit is an important issue. The main design objectives for these new circuits are low power dissipation and full-voltage swing at a low supply voltage (V_dd=2 V). The proposed designs are compared with previously known circuits and are shown to provide superior performance. Several XOR circuits have been fully simulated using HSPICE with a 0.4μm CMOS technology at 2 V supply voltage.

Original language	English (US)
Pages (from-to)	225-229
Number of pages	5
Journal	Conference Proceedings - IEEE SOUTHEASTCON
State	Published - Jan 1 1997
Event	Proceedings of the 1997 IEEE SOUTHEASTCON - Blacksburg, VA, USA Duration: Apr 12 1997 → Apr 14 1997

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abstract = "New methods are proposed to implement the exclusive-OR and exclusive-NOR functions at the transistor level under low supply voltage. Since the dynamic power dissipation in CMOS is proportional to Vdd2, low-voltage operation of the circuit is an important issue. The main design objectives for these new circuits are low power dissipation and full-voltage swing at a low supply voltage (Vdd=2 V). The proposed designs are compared with previously known circuits and are shown to provide superior performance. Several XOR circuits have been fully simulated using HSPICE with a 0.4μm CMOS technology at 2 V supply voltage.",

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AU - Sobelman, Gerald E

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N2 - New methods are proposed to implement the exclusive-OR and exclusive-NOR functions at the transistor level under low supply voltage. Since the dynamic power dissipation in CMOS is proportional to Vdd2, low-voltage operation of the circuit is an important issue. The main design objectives for these new circuits are low power dissipation and full-voltage swing at a low supply voltage (Vdd=2 V). The proposed designs are compared with previously known circuits and are shown to provide superior performance. Several XOR circuits have been fully simulated using HSPICE with a 0.4μm CMOS technology at 2 V supply voltage.

AB - New methods are proposed to implement the exclusive-OR and exclusive-NOR functions at the transistor level under low supply voltage. Since the dynamic power dissipation in CMOS is proportional to Vdd2, low-voltage operation of the circuit is an important issue. The main design objectives for these new circuits are low power dissipation and full-voltage swing at a low supply voltage (Vdd=2 V). The proposed designs are compared with previously known circuits and are shown to provide superior performance. Several XOR circuits have been fully simulated using HSPICE with a 0.4μm CMOS technology at 2 V supply voltage.

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T2 - Proceedings of the 1997 IEEE SOUTHEASTCON

Y2 - 12 April 1997 through 14 April 1997

ER -

New low-voltage circuits for XOR and XNOR

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