New directions in GaN material research: Thinner and smaller

Ge Yuan, Sung Hyun Park, Benjamin Leung, Jung Han

Research output: Chapter in Book/Report/Conference proceedingConference contribution


As the GaN material research is reaching maturity with the phenomenal success in LED industry, there is now need to look beyond conventional epitaxy. In this paper we will summarize a few novel directions that we are pursuing. In the first part of this paper, we highlighted our effort to grow single crystal GaN on amorphous substrate. With the successive applications of a phenomenon called evolutionary selection along two perpendicular axes, we remove the degree of freedom in grain orientations from 3 to 0 and successfully prepared single-crystalline GaN on amorphous oxide template. We dedicated the second part of this paper to our recent findings in GaN nanomembrane. Via conductivity selective electrochemical etching, we have fabricated GaN nanomembrane as thin as 90 nm. The thin and "softa" GaN nanomembrane is proven to maintain its as-grown crystal quality. We have also demonstrated a 300 nm thick InGaN/GaN nanomembrane LED.

Original languageEnglish (US)
Title of host publicationGallium Nitride Materials and Devices IX
ISBN (Print)9780819498991
StatePublished - 2014
EventGallium Nitride Materials and Devices IX - San Francisco, CA, United States
Duration: Feb 3 2014Feb 6 2014

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X


ConferenceGallium Nitride Materials and Devices IX
Country/TerritoryUnited States
CitySan Francisco, CA


  • GaN
  • evolutionary selection growth
  • flexible
  • nanomembrane


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