Abstract
Dual Interlocked Storage Cell (DICE) flip-flops with isolated well structures were experimentally evaluated under neutron irradiation. Each design implements radiation hardening by layout techniques through spatial separation of transistors storing equivalent logic nodes into vertically separated wells to minimize charge sharing. Neutron beam testing of 28nm isolated well DICE designs confirms an order of magnitude lower upset rates compared to standard DICE flip-flops.
| Original language | English (US) |
|---|---|
| Title of host publication | 2026 IEEE International Reliability Physics Symposium, IRPS 2026 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (Electronic) | 9798331589714 |
| DOIs | |
| State | Published - 2026 |
| Event | 2026 IEEE International Reliability Physics Symposium, IRPS 2026 - Tucson, United States Duration: Mar 22 2026 → Mar 26 2026 |
Publication series
| Name | IEEE International Reliability Physics Symposium Proceedings |
|---|---|
| ISSN (Print) | 1541-7026 |
Conference
| Conference | 2026 IEEE International Reliability Physics Symposium, IRPS 2026 |
|---|---|
| Country/Territory | United States |
| City | Tucson |
| Period | 3/22/26 → 3/26/26 |
Bibliographical note
Publisher Copyright:© 2026 IEEE.
Keywords
- DICE flip-flops
- layout techniques
- separated wells
- single-event upsets
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