Negative differential resistance in short-channel graphene FETs: Semianalytical model and simulations

Roberto Grassi; Tony Low; Antonio Gnudi; Giorgio Baccarani

doi:10.1109/DRC.2012.6256975

Negative differential resistance in short-channel graphene FETs: Semianalytical model and simulations

Roberto Grassi, Tony Low, Antonio Gnudi, Giorgio Baccarani

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

We discuss the phenomenon of negative output differential resistance of short-channel graphene FETs at room temperature, whose physical origin arises from a transport-mode bottleneck induced by the contact-doped graphene. We outline a simple semianalytical model, based on semiclassical ballistic transport, which captures this effect and qualitatively reproduces results from the non-equilibrium Green's function approach (NEGF). We find that this effect is robust against phonon scattering.

Original language	English (US)
Title of host publication	70th Device Research Conference, DRC 2012 - Conference Digest
Pages	107-108
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2012.6256975
State	Published - 2012
Event	70th Device Research Conference, DRC 2012 - University Park, PA, United States Duration: Jun 18 2012 → Jun 20 2012

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Other

Other	70th Device Research Conference, DRC 2012
Country/Territory	United States
City	University Park, PA
Period	6/18/12 → 6/20/12

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10.1109/DRC.2012.6256975

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Negative differential resistance in short-channel graphene FETs: Semianalytical model and simulations. / Grassi, Roberto; Low, Tony; Gnudi, Antonio et al.
70th Device Research Conference, DRC 2012 - Conference Digest. 2012. p. 107-108 6256975 (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Grassi, R, Low, T, Gnudi, A & Baccarani, G 2012, Negative differential resistance in short-channel graphene FETs: Semianalytical model and simulations. in 70th Device Research Conference, DRC 2012 - Conference Digest., 6256975, Device Research Conference - Conference Digest, DRC, pp. 107-108, 70th Device Research Conference, DRC 2012, University Park, PA, United States, 6/18/12. https://doi.org/10.1109/DRC.2012.6256975

@inproceedings{d490cfb0131f4d07933f1df9340afcda,

title = "Negative differential resistance in short-channel graphene FETs: Semianalytical model and simulations",

abstract = "We discuss the phenomenon of negative output differential resistance of short-channel graphene FETs at room temperature, whose physical origin arises from a transport-mode bottleneck induced by the contact-doped graphene. We outline a simple semianalytical model, based on semiclassical ballistic transport, which captures this effect and qualitatively reproduces results from the non-equilibrium Green's function approach (NEGF). We find that this effect is robust against phonon scattering.",

author = "Roberto Grassi and Tony Low and Antonio Gnudi and Giorgio Baccarani",

year = "2012",

doi = "10.1109/DRC.2012.6256975",

language = "English (US)",

isbn = "9781467311618",

series = "Device Research Conference - Conference Digest, DRC",

pages = "107--108",

booktitle = "70th Device Research Conference, DRC 2012 - Conference Digest",

note = "70th Device Research Conference, DRC 2012 ; Conference date: 18-06-2012 Through 20-06-2012",

}

TY - GEN

T1 - Negative differential resistance in short-channel graphene FETs

T2 - 70th Device Research Conference, DRC 2012

AU - Grassi, Roberto

AU - Low, Tony

AU - Gnudi, Antonio

AU - Baccarani, Giorgio

PY - 2012

Y1 - 2012

N2 - We discuss the phenomenon of negative output differential resistance of short-channel graphene FETs at room temperature, whose physical origin arises from a transport-mode bottleneck induced by the contact-doped graphene. We outline a simple semianalytical model, based on semiclassical ballistic transport, which captures this effect and qualitatively reproduces results from the non-equilibrium Green's function approach (NEGF). We find that this effect is robust against phonon scattering.

AB - We discuss the phenomenon of negative output differential resistance of short-channel graphene FETs at room temperature, whose physical origin arises from a transport-mode bottleneck induced by the contact-doped graphene. We outline a simple semianalytical model, based on semiclassical ballistic transport, which captures this effect and qualitatively reproduces results from the non-equilibrium Green's function approach (NEGF). We find that this effect is robust against phonon scattering.

UR - http://www.scopus.com/inward/record.url?scp=84866903614&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84866903614&partnerID=8YFLogxK

U2 - 10.1109/DRC.2012.6256975

DO - 10.1109/DRC.2012.6256975

M3 - Conference contribution

AN - SCOPUS:84866903614

SN - 9781467311618

T3 - Device Research Conference - Conference Digest, DRC

SP - 107

EP - 108

BT - 70th Device Research Conference, DRC 2012 - Conference Digest

Y2 - 18 June 2012 through 20 June 2012

ER -

Negative differential resistance in short-channel graphene FETs: Semianalytical model and simulations

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