Negative differential resistance in short-channel graphene FETs: Semianalytical model and simulations

Roberto Grassi, Tony Low, Antonio Gnudi, Giorgio Baccarani

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

We discuss the phenomenon of negative output differential resistance of short-channel graphene FETs at room temperature, whose physical origin arises from a transport-mode bottleneck induced by the contact-doped graphene. We outline a simple semianalytical model, based on semiclassical ballistic transport, which captures this effect and qualitatively reproduces results from the non-equilibrium Green's function approach (NEGF). We find that this effect is robust against phonon scattering.

Original languageEnglish (US)
Title of host publication70th Device Research Conference, DRC 2012 - Conference Digest
Pages107-108
Number of pages2
DOIs
StatePublished - Oct 5 2012
Event70th Device Research Conference, DRC 2012 - University Park, PA, United States
Duration: Jun 18 2012Jun 20 2012

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Other

Other70th Device Research Conference, DRC 2012
CountryUnited States
CityUniversity Park, PA
Period6/18/126/20/12

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