Abstract
Infrared light-emitting diodes possess potential applications in optical communication and safety detection. In this paper, we fabricated near-infrared polymer light-emitting diode employing a commercial near-infrared (NIR) organic dye as an emissive dopant dispersed within poly(N-vinylcarbazole) (PVK) by spin-casting method. The used device structure was indium tin oxide/3,4-polyethylene-dioxythiophene-polystyrene sulfonate/PVK: NIR dye/Al. A near-infrared electroluminescence with a peak wavelength at 890 nm was observed, and the maximum irradiance and external quantum efficiency, respectively, reached 58 μW and 0.015%.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 7891-7893 |
| Number of pages | 3 |
| Journal | Thin Solid Films |
| Volume | 516 |
| Issue number | 21 |
| DOIs | |
| State | Published - Sep 1 2008 |
Bibliographical note
Funding Information:The authors would like to thank the Hundreds Talents program of the Chinese Academy of Sciences, National Natural Foundation of China (50573075), National Science Fund for Distinguished Young Scholars of China (50325312), the Ministry of Science and Technology of China (973 program No. 2002CB613404).
Keywords
- Light-emitting diodes
- Near-infrared dyes
- Near-infrared emission
- semiconductor polymer