Near-infrared polymer light-emitting diodes based on infrared dye doped poly(N-vinylcarbazole) film

Yu Xuan, Gang Qian, Zhiyuan Wang, Dongge Ma

Research output: Contribution to journalLetterpeer-review

13 Scopus citations

Abstract

Infrared light-emitting diodes possess potential applications in optical communication and safety detection. In this paper, we fabricated near-infrared polymer light-emitting diode employing a commercial near-infrared (NIR) organic dye as an emissive dopant dispersed within poly(N-vinylcarbazole) (PVK) by spin-casting method. The used device structure was indium tin oxide/3,4-polyethylene-dioxythiophene-polystyrene sulfonate/PVK: NIR dye/Al. A near-infrared electroluminescence with a peak wavelength at 890 nm was observed, and the maximum irradiance and external quantum efficiency, respectively, reached 58 μW and 0.015%.

Original languageEnglish (US)
Pages (from-to)7891-7893
Number of pages3
JournalThin Solid Films
Volume516
Issue number21
DOIs
StatePublished - Sep 1 2008

Bibliographical note

Funding Information:
The authors would like to thank the Hundreds Talents program of the Chinese Academy of Sciences, National Natural Foundation of China (50573075), National Science Fund for Distinguished Young Scholars of China (50325312), the Ministry of Science and Technology of China (973 program No. 2002CB613404).

Keywords

  • Light-emitting diodes
  • Near-infrared dyes
  • Near-infrared emission
  • semiconductor polymer

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