Near-field spectroscopy of silicon dioxide thin films

L. M. Zhang, G. O. Andreev, Z. Fei, A. S. McLeod, G. Dominguez, M. Thiemens, A. H. Castro-Neto, D. N. Basov, M. M. Fogler

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93 Scopus citations

Abstract

We analyze the results of scanning near-field infrared spectroscopy performed on thin films of a-SiO 2 on Si substrate. The measured near-field signal exhibits surface-phonon resonances whose strength has a prominent thickness dependence in the range from 2 to 300nm. These observations are compared with calculations in which the tip of the near-field infrared spectrometer is modeled either as a point dipole or an elongated spheroid. The latter model accounts for the antenna effect of the tip and gives a better agreement with the experiment. Possible applications of the near-field technique for depth profiling of layered nanostructures are discussed.

Original languageEnglish (US)
Article number075419
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume85
Issue number7
DOIs
StatePublished - Feb 21 2012
Externally publishedYes

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