Near-field scanning optical spectroscopy of an InGaN quantum well

P. A. Crowell, D. K. Young, S. Keller, E. L. Hu, D. D. Awschalom

Research output: Contribution to journalArticlepeer-review

88 Scopus citations

Abstract

Near-field scanning optical microscopy is used to image photoluminescence (PL) in an InGaN/GaN quantum well (QW) with spatial resolution of approximately 100 nm for temperatures between 50 and 295 K. Strong (∼50%) fluctuations in the quantum well photoluminescence as well as a tenfold enhancement of deep level-related emission at lower energies occur at large (∼500 nm diam) pits in the heterostructure. Regions of smaller (∼15%) fluctuations in the QW PL are not correlated with the presence of pits. The spectrum of the QW PL shows no significant variations on the length scales probed in this experiment. We thus find no spectroscopic signature of the recombination of strongly localized carriers at temperatures above 50 K.

Original languageEnglish (US)
Pages (from-to)927-929
Number of pages3
JournalApplied Physics Letters
Volume72
Issue number8
DOIs
StatePublished - Dec 1 1998

Fingerprint Dive into the research topics of 'Near-field scanning optical spectroscopy of an InGaN quantum well'. Together they form a unique fingerprint.

Cite this