Nb Doping and Alloying of 2D WS₂ by Atomic Layer Deposition for 2D Transition Metal Dichalcogenide Transistors and HER Electrocatalysts

We utilize plasma-enhanced atomic layer deposition to synthesize two-dimensional Nb-doped WS₂ and Nb_xW_1-xS_y alloys to expand the range of properties and improve the performance of 2D transition metal dichalcogenides for electronics and catalysis. Using a supercycle deposition process, films are prepared with compositions spanning the range from WS₂ to NbS₃. While the W-rich films form crystalline disulfides, the Nb-rich films form amorphous trisulfides. Through tuning the composition of the films, the electrical resistivity is reduced by 4 orders of magnitude compared to pure ALD-grown WS₂. To produce Nb-doped WS₂ films, we developed a separate ABC-type supercycle process in which a W precursor pulse precedes the Nb precursor pulse, thereby reducing the minimum Nb content of the film by a factor of 3 while maintaining a uniform distribution of the Nb dopant. Initial results are presented on the electrical and electrocatalytic performances of the films. Promisingly, the Nb_xW_1-xS_y films of 10 nm thickness and composition x ≈ 0.08 are p-type semiconductors and have a low contact resistivity of (8 ± 1) × 10² Ω cm to Pd/Au contacts, demonstrating their potential use in contact engineering of 2D TMD transistors.